Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure
(2021)
Journal Article
Kong, L., Wu, J., Li, Y., Cao, F., Wang, F., Wu, Q., Shen, P., Zhang, C., Luo, Y., Wang, L., Turyanska, L., Ding, X., Zhang, J., Zhao, Y., & Yang, X. (2022). Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure. Science Bulletin, 67(5), 529-536. https://doi.org/10.1016/j.scib.2021.12.013
Emerging quantum dots (QDs) based light-emitting field-effect transistors (QLEFETs) could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost. Considerable efforts have b... Read More about Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure.