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Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure

Kong, Lingmei; Wu, Jialong; Li, Yunguo; Cao, Fan; Wang, Feijiu; Wu, Qianqian; Shen, Piaoyang; Zhang, Chengxi; Luo, Yun; Wang, Lin; Turyanska, Lyudmila; Ding, Xingwei; Zhang, Jianhua; Zhao, Yongbiao; Yang, Xuyong

Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure Thumbnail


Authors

Lingmei Kong

Jialong Wu

Yunguo Li

Fan Cao

Feijiu Wang

Qianqian Wu

Piaoyang Shen

Chengxi Zhang

Yun Luo

Dr LIN WANG LIN.WANG1@NOTTINGHAM.AC.UK
ASSISTANT PROFESSOR

Xingwei Ding

Jianhua Zhang

Yongbiao Zhao

Xuyong Yang



Abstract

Emerging quantum dots (QDs) based light-emitting field-effect transistors (QLEFETs) could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost. Considerable efforts have been devoted to designing device structure and to understanding the underlying physics, yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers. Here, we report highly efficient QLEFETs with an external quantum efficiency (EQE) of over 20% by employing a dielectric-QDs-dielectric (DQD) sandwich structure. Such DQD structure is used to control the carrier behavior by modulating energy band alignment, thus shifting the exciton recombination zone into the emissive layer. Also, enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer. The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs, which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

Citation

Kong, L., Wu, J., Li, Y., Cao, F., Wang, F., Wu, Q., Shen, P., Zhang, C., Luo, Y., Wang, L., Turyanska, L., Ding, X., Zhang, J., Zhao, Y., & Yang, X. (2022). Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure. Science Bulletin, 67(5), 529-536. https://doi.org/10.1016/j.scib.2021.12.013

Journal Article Type Article
Acceptance Date Dec 7, 2021
Online Publication Date Dec 13, 2021
Publication Date 2022-03
Deposit Date Jan 10, 2022
Publicly Available Date Dec 14, 2022
Journal Science Bulletin
Print ISSN 2095-9273
Electronic ISSN 2095-9281
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 67
Issue 5
Pages 529-536
DOI https://doi.org/10.1016/j.scib.2021.12.013
Keywords Multidisciplinary
Public URL https://nottingham-repository.worktribe.com/output/7059145
Publisher URL https://www.sciencedirect.com/science/article/pii/S2095927321007659?via%3Dihub

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