Lingmei Kong
Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure
Kong, Lingmei; Wu, Jialong; Li, Yunguo; Cao, Fan; Wang, Feijiu; Wu, Qianqian; Shen, Piaoyang; Zhang, Chengxi; Luo, Yun; Wang, Lin; Turyanska, Lyudmila; Ding, Xingwei; Zhang, Jianhua; Zhao, Yongbiao; Yang, Xuyong
Authors
Jialong Wu
Yunguo Li
Fan Cao
Feijiu Wang
Qianqian Wu
Piaoyang Shen
Chengxi Zhang
Yun Luo
Dr LIN WANG LIN.WANG1@NOTTINGHAM.AC.UK
ASSISTANT PROFESSOR
Dr LYUDMILA TURYANSKA LYUDMILA.TURYANSKA@NOTTINGHAM.AC.UK
ASSOCIATE PROFESSOR
Xingwei Ding
Jianhua Zhang
Yongbiao Zhao
Xuyong Yang
Abstract
Emerging quantum dots (QDs) based light-emitting field-effect transistors (QLEFETs) could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost. Considerable efforts have been devoted to designing device structure and to understanding the underlying physics, yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers. Here, we report highly efficient QLEFETs with an external quantum efficiency (EQE) of over 20% by employing a dielectric-QDs-dielectric (DQD) sandwich structure. Such DQD structure is used to control the carrier behavior by modulating energy band alignment, thus shifting the exciton recombination zone into the emissive layer. Also, enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer. The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs, which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.
Citation
Kong, L., Wu, J., Li, Y., Cao, F., Wang, F., Wu, Q., Shen, P., Zhang, C., Luo, Y., Wang, L., Turyanska, L., Ding, X., Zhang, J., Zhao, Y., & Yang, X. (2022). Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure. Science Bulletin, 67(5), 529-536. https://doi.org/10.1016/j.scib.2021.12.013
Journal Article Type | Article |
---|---|
Acceptance Date | Dec 7, 2021 |
Online Publication Date | Dec 13, 2021 |
Publication Date | 2022-03 |
Deposit Date | Jan 10, 2022 |
Publicly Available Date | Dec 14, 2022 |
Journal | Science Bulletin |
Print ISSN | 2095-9273 |
Electronic ISSN | 2095-9281 |
Publisher | Elsevier |
Peer Reviewed | Peer Reviewed |
Volume | 67 |
Issue | 5 |
Pages | 529-536 |
DOI | https://doi.org/10.1016/j.scib.2021.12.013 |
Keywords | Multidisciplinary |
Public URL | https://nottingham-repository.worktribe.com/output/7059145 |
Publisher URL | https://www.sciencedirect.com/science/article/pii/S2095927321007659?via%3Dihub |
Files
2022 Science Bulletin Light Emmitting FET QD
(2.4 Mb)
PDF
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