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Dr Paul Evans' Outputs (4)

Novel GaN-HEMT modelling method based on S-parameters characterisation and its implementation in Virtual Prototyping software (2018)
Presentation / Conference Contribution
Li, K., Pace, L., Videt, A., IDIR, N., Evans, P., Johnson, M., Defrance, N., & Dejaeger, J.-C. (2018, July). Novel GaN-HEMT modelling method based on S-parameters characterisation and its implementation in Virtual Prototyping software. Poster presented at EPSRC Centre for Power Electronics (CPE) Annual Conference, Loughborough, UK

Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation (2018)
Presentation / Conference Contribution
Sen, S., Evans, P. L., & Johnson, C. M. (2018, August). Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation. Presented at 2018 IEEE Vehicle Power and Propulsion Conference (VPPC), Chicago, IL, USA

© 2018 IEEE Project aims to develop capability for OEMs and suppliers to 'virtually-connect' multiple prototype powertrain components (engine, motor-drive etc.) and engage in real-time system simulation, thereby reducing cost by eliminating co-locati... Read More about Multi-Frequency Averaging (MFA) Model of Electric-Hybrid Powertrain Suitable for Variable Frequency Operation Applied in Geographically-Distributed Power Hardware-in-the-Loop (GD-PHiL) Simulation.

SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions (2018)
Journal Article
Li, K., Evans, P., & Johnson, M. (2018). SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions. IET Electrical Systems in Transportation, 8(1), 3-11. https://doi.org/10.1049/iet-est.2017.0022

(This study is for special section ‘Design, modelling and control of electric drives for transportation applications’) The conduction and switching losses of silicon carbide (SIC) and gallium nitride (GaN) power transistors are compared in this study... Read More about SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions.