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Novel GaN-HEMT modelling method based on S-parameters characterisation and its implementation in Virtual Prototyping software

Li, Ke; Pace, Loris; Videt, Arnaud; IDIR, Nadir; Evans, Paul; Johnson, Mark; Defrance, Nicolas; Dejaeger, Jean-Claude

Authors

Dr KE LI Ke.Li2@nottingham.ac.uk
Associate Professor

Loris Pace

Arnaud Videt

Nadir IDIR

Mark Johnson

Nicolas Defrance

Jean-Claude Dejaeger



Citation

Li, K., Pace, L., Videt, A., IDIR, N., Evans, P., Johnson, M., Defrance, N., & Dejaeger, J.-C. (2018, July). Novel GaN-HEMT modelling method based on S-parameters characterisation and its implementation in Virtual Prototyping software. Poster presented at EPSRC Centre for Power Electronics (CPE) Annual Conference, Loughborough, UK

Presentation Conference Type Poster
Conference Name EPSRC Centre for Power Electronics (CPE) Annual Conference
Start Date Jul 4, 2018
End Date Jul 5, 2018
Publication Date 2018
Deposit Date Nov 19, 2024
Peer Reviewed Peer Reviewed
Public URL https://nottingham-repository.worktribe.com/output/35155489