High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy
(2024)
Journal Article
Makarovsky, O., Hill, R. J. A., Cheng, T. S., Summerfield, A., Taniguchi, T., Watanabe, K., Mellor, C. J., Patanè, A., Eaves, L., Novikov, S. V., & Beton, P. H. (2024). High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy. Communications Materials, 5, Article 189. https://doi.org/10.1038/s43246-024-00633-x
High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performan... Read More about High-temperature Brown-Zak oscillations in graphene/hBN moiré field effect transistor fabricated using molecular beam epitaxy.