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Altermagnetic lifting of Kramers spin degeneracy (2024)
Journal Article
Krempaský, J., Šmejkal, L., D’Souza, S. W., Hajlaoui, M., Springholz, G., Uhlířová, K., …Jungwirth, T. (2024). Altermagnetic lifting of Kramers spin degeneracy. Nature, 626(7999), 517-522. https://doi.org/10.1038/s41586-023-06907-7

Lifted Kramers spin degeneracy (LKSD) has been among the central topics of condensed-matter physics since the dawn of the band theory of solids1,2. It underpins established practical applications as well as current frontier research, ranging from mag... Read More about Altermagnetic lifting of Kramers spin degeneracy.

Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO 2 (2024)
Journal Article
Fedchenko, O., Minár, J., Akashdeep, A., D’Souza, S. W., Vasilyev, D., Tkach, O., …Elmers, H. (2024). Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO 2. Science Advances, 10(5), Article eadj4883. https://doi.org/10.1126/sciadv.adj4883

Altermagnets are an emerging elementary class of collinear magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The correspo... Read More about Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO 2.

Chiral Magnons in Altermagnetic RuO2 (2023)
Journal Article
Šmejkal, L., Marmodoro, A., Ahn, K., González-Hernández, R., Turek, I., Mankovsky, S., …Jungwirth, T. (2023). Chiral Magnons in Altermagnetic RuO2. Physical Review Letters, 131(25), Article 256703. https://doi.org/10.1103/PhysRevLett.131.256703

Magnons in ferromagnets have one chirality, and typically are in the GHz range and have a quadratic dispersion near the zero wave vector. In contrast, magnons in antiferromagnets are commonly considered to have bands with both chiralities that are de... Read More about Chiral Magnons in Altermagnetic RuO2.

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2 (2023)
Journal Article
Tschirner, T., Keßler, P., Gonzalez Betancourt, R. D., Kotte, T., Kriegner, D., Büchner, B., …Veyrat, L. (2023). Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2. APL Materials, 11(10), Article 101103. https://doi.org/10.1063/5.0160335

Observations of the anomalous Hall effect in RuO2 and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in... Read More about Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2.

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature (2023)
Journal Article
Amin, O. J., Poole, S. F., Reimers, S., Barton, L. X., Dal Din, A., Maccherozzi, F., …Wadley, P. (2023). Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature. Nature Nanotechnology, 18(8), 849-853. https://doi.org/10.1038/s41565-023-01386-3

Topologically protected magnetic textures are promising candidates for information carriers in future memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. These textures—nanoscale whirls in... Read More about Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature.

Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs (2023)
Journal Article
Linn, A. G., Hao, P., Gordon, K. N., Narayan, D., Berggren, B. S., Speiser, N., …Dessau, D. S. (2023). Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs. npj Quantum Materials, 8(1), Article 19. https://doi.org/10.1038/s41535-023-00554-x

Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-r... Read More about Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs.

Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor (2023)
Journal Article
Gonzalez Betancourt, R. D., Zubáč, J., Gonzalez-Hernandez, R., Geishendorf, K., Šobáň, Z., Springholz, G., …Kriegner, D. (2023). Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor. Physical Review Letters, 130(3), Article 036702. https://doi.org/10.1103/PhysRevLett.130.036702

The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a noncollinear magnetic order. Here we observe... Read More about Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor.

Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide (2022)
Journal Article
Feng, Z., Zhou, X., Šmejkal, L., Wu, L., Zhu, Z., Guo, H., …Liu, Z. (in press). Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide. Nature Electronics, https://doi.org/10.1038/s41928-022-00907-7

In the version of this article initially published, square brackets and parentheses were incorrect in Fig. 1g and throughout Fig. 2 (excepting lower labels in Fig. 2d–f). Further, in the second paragraph of the “Consistency with theoretical predictio... Read More about Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide.

An anomalous Hall effect in altermagnetic ruthenium dioxide (2022)
Journal Article
Feng, Z., Zhou, X., Šmejkal, L., Wu, L., Zhu, Z., Guo, H., …Liu, Z. (2022). An anomalous Hall effect in altermagnetic ruthenium dioxide. Nature Electronics, 5(11), 735-743. https://doi.org/10.1038/s41928-022-00866-z

The anomalous Hall effect is a time-reversal symmetry-breaking magneto-electronic phenomenon originally discovered in ferromagnets. Recently, ruthenium dioxide (RuO2) with a compensated antiparallel magnetic order has been predicted to generate an an... Read More about An anomalous Hall effect in altermagnetic ruthenium dioxide.

Emerging Research Landscape of Altermagnetism (2022)
Journal Article
Šmejkal, L., Sinova, J., & Jungwirth, T. (2022). Emerging Research Landscape of Altermagnetism. Physical Review X, 12(4), Article 040501. https://doi.org/10.1103/physrevx.12.040501

Magnetism is one of the largest, most fundamental, and technologically most relevant fields of condensed-matter physics. Traditionally, two basic magnetic phases have been distinguished ferromagnetism and antiferromagnetism. The spin polarization in... Read More about Emerging Research Landscape of Altermagnetism.

Beyond Conventional Ferromagnetism and Antiferromagnetism: A Phase with Nonrelativistic Spin and Crystal Rotation Symmetry (2022)
Journal Article
Šmejkal, L., Sinova, J., & Jungwirth, T. (2022). Beyond Conventional Ferromagnetism and Antiferromagnetism: A Phase with Nonrelativistic Spin and Crystal Rotation Symmetry. Physical Review X, 12(3), Article 031042. https://doi.org/10.1103/PhysRevX.12.031042

Recent series of theoretical and experimental reports have driven attention to time-reversal symmetry-breaking spintronic and spin-splitting phenomena in materials with collinear-compensated magnetic order incompatible with conventional ferromagnetis... Read More about Beyond Conventional Ferromagnetism and Antiferromagnetism: A Phase with Nonrelativistic Spin and Crystal Rotation Symmetry.

Atomically sharp domain walls in an antiferromagnet (2022)
Journal Article
Krizek, F., Reimers, S., Kašpar, Z., Marmodoro, A., Michalička, J., Man, O., …Jungwirth, T. (2022). Atomically sharp domain walls in an antiferromagnet. Science Advances, 8(13), https://doi.org/10.1126/sciadv.abn3535

The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its physical fundamentals to applications in information technologies. Here, we explore antiferromagnetic CuMnAs in which... Read More about Atomically sharp domain walls in an antiferromagnet.

Anomalous Hall antiferromagnets (2022)
Journal Article
Šmejkal, L., MacDonald, A. H., Sinova, J., Nakatsuji, S., & Jungwirth, T. (2022). Anomalous Hall antiferromagnets. Nature Reviews Materials, https://doi.org/10.1038/s41578-022-00430-3

The Hall effect, in which a current flows perpendicular to an electrical bias, has been prominent in the history of condensed matter physics. Appearing variously in classical, relativistic and quantum guises, the Hall effect has — among other roles —... Read More about Anomalous Hall antiferromagnets.

Giant and Tunneling Magnetoresistance in Unconventional Collinear Antiferromagnets with Nonrelativistic Spin-Momentum Coupling (2022)
Journal Article
Šmejkal, L., Hellenes, A. B., González-Hernández, R., Sinova, J., & Jungwirth, T. (2022). Giant and Tunneling Magnetoresistance in Unconventional Collinear Antiferromagnets with Nonrelativistic Spin-Momentum Coupling. Physical Review X, 12(1), Article 011028. https://doi.org/10.1103/PhysRevX.12.011028

Giant and tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a multilayer... Read More about Giant and Tunneling Magnetoresistance in Unconventional Collinear Antiferromagnets with Nonrelativistic Spin-Momentum Coupling.

Defect-driven antiferromagnetic domain walls in CuMnAs films (2022)
Journal Article
Reimers, S., Kriegner, D., Gomonay, O., Carbone, D., Krizek, F., Novák, V., …Edmonds, K. W. (2022). Defect-driven antiferromagnetic domain walls in CuMnAs films. Nature Communications, 13(1), Article 724. https://doi.org/10.1038/s41467-022-28311-x

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the micr... Read More about Defect-driven antiferromagnetic domain walls in CuMnAs films.

Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs (2021)
Journal Article
Heitz, J. J., Nádvorník, L., Balos, V., Behovits, Y., Chekhov, A. L., Seifert, T. S., …Kampfrath, T. (2021). Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs. Physical Review Applied, 16(6), Article 064047. https://doi.org/10.1103/PhysRevApplied.16.064047

We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically... Read More about Optically Gated Terahertz-Field-Driven Switching of Antiferromagnetic CuMnAs.

Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect (2021)
Journal Article
Zhang, Y., Xu, Q., Koepernik, K., Rezaev, R., Janson, O., Železný, J., …Sun, Y. (2021). Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect. npj Computational Materials, 7(1), Article 167. https://doi.org/10.1038/s41524-021-00635-0

Spin Hall effect (SHE) has its special position in spintronics. To gain new insight into SHE and to identify materials with substantial spin Hall conductivity (SHC), we performed high-precision high-throughput ab initio calculations of the intrinsic... Read More about Different types of spin currents in the comprehensive materials database of nonmagnetic spin Hall effect.

Unidirectional magnetoresistance and spin-orbit torque in NiMnSb (2021)
Journal Article
Železný, J., Fang, Z., Olejník, K., Patchett, J., Gerhard, F., Gould, C., …Ciccarelli, C. (2021). Unidirectional magnetoresistance and spin-orbit torque in NiMnSb. Physical Review B, 104(5), 1-13. https://doi.org/10.1103/PhysRevB.104.054429

Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and... Read More about Unidirectional magnetoresistance and spin-orbit torque in NiMnSb.

Frequency‐Independent Terahertz Anomalous Hall Effect in DyCo 5, Co 32Fe68, and Gd 27Fe73 Thin Films from DC to 40 THz (2021)
Journal Article
Seifert, T. S., Martens, U., Radu, F., Ribow, M., Berritta, M., Nádvorník, L., …Kampfrath, T. (2021). Frequency‐Independent Terahertz Anomalous Hall Effect in DyCo 5, Co 32Fe68, and Gd 27Fe73 Thin Films from DC to 40 THz. Advanced Materials, 33(14), Article 2007398. https://doi.org/10.1002/adma.202007398

The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on s... Read More about Frequency‐Independent Terahertz Anomalous Hall Effect in DyCo 5, Co 32Fe68, and Gd 27Fe73 Thin Films from DC to 40 THz.

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses (2020)
Journal Article
Kašpar, Z., Surýnek, M., Zubáč, J., Krizek, F., Novák, V., Campion, R. P., …Jungwirth, T. (2021). Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses. Nature Electronics, 4(1), 30-37. https://doi.org/10.1038/s41928-020-00506-4

Antiferromagnets are of potential use in the development of spintronic devices due to their ultrafast dynamics, insensitivity to external magnetic fields and absence of magnetic stray fields. Similar to their ferromagnetic counterparts, antiferromagn... Read More about Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses.

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs (2020)
Journal Article
Janda, T., Godinho, J., Ostatnicky, T., Pfitzner, E., Ulrich, G., Hoehl, A., …Wunderlich, J. (2020). Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs. Physical Review Materials, 4(9), Article 094413. https://doi.org/10.1103/physrevmaterials.4.094413

Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of antiferromagnetic domains is one of the key prerequisit... Read More about Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs.

Temperature-dependent resistivity and anomalous Hall effect in NiMnSb from first principles (2019)
Journal Article
Wagenknecht, D., Šmejkal, L., Kašpar, Z., Sinova, J., Jungwirth, T., Kudrnovský, J., …Turek, I. (2019). Temperature-dependent resistivity and anomalous Hall effect in NiMnSb from first principles. Physical Review B, 99(17), Article 174433. https://doi.org/10.1103/physrevb.99.174433

© 2019 American Physical Society. We present implementation of the alloy analogy model within fully relativistic density-functional theory with the coherent potential approximation for a treatment of nonzero temperatures. We calculate contributions o... Read More about Temperature-dependent resistivity and anomalous Hall effect in NiMnSb from first principles.

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet (2018)
Journal Article
Godinho, J., Reichlová, H., Kriegner, D., Novák, V., Olejník, K., Kašpar, Z., …Wunderlich, J. (2018). Electrically induced and detected Néel vector reversal in a collinear antiferromagnet. Nature Communications, 9(1), Article 4686. https://doi.org/10.1038/s41467-018-07092-2

© 2018, The Author(s). Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with el... Read More about Electrically induced and detected Néel vector reversal in a collinear antiferromagnet.

Current polarity-dependent manipulation of antiferromagnetic domains (2018)
Journal Article
Wadley, P., Reimers, S., Grzybowski, M. J., Andrews, C., Wang, M., Chauhan, J., …Jungwirth, T. (2018). Current polarity-dependent manipulation of antiferromagnetic domains. Nature Nanotechnology, 13(5), 362-365. https://doi.org/10.1038/s41565-018-0079-1

Antiferromagnets have several favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields. Tetragonal CuMnAs is a testbed system in which the antiferro... Read More about Current polarity-dependent manipulation of antiferromagnetic domains.

Terahertz electrical writing speed in an antiferromagnetic memory (2018)
Journal Article
Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., …Jungwirth, T. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3), Article eaar3566. https://doi.org/10.1126/sciadv.aar3566

© 2018 American Association for the Advancement of Science. All rights reserved. The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based... Read More about Terahertz electrical writing speed in an antiferromagnetic memory.

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance (2018)
Journal Article
Bodnar, S. Y., Šmejkal, L., Turek, I., Jungwirth, T., Gomonay, O., Sinova, J., …Jourdan, M. (2018). Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance. Nature Communications, 9(1), Article 348. https://doi.org/10.1038/s41467-017-02780-x

Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ordering temperature suitable for applications, reproduc... Read More about Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.

Magnetic anisotropy in antiferromagnetic hexagonal MnTe (2017)
Journal Article
Kriegner, D., Reichlova, H., Grenzer, J., Schmidt, W., Ressouche, E., Godinho, J., …Výborný, K. (2017). Magnetic anisotropy in antiferromagnetic hexagonal MnTe. Physical Review B, 96(21), https://doi.org/10.1103/PhysRevB.96.214418

Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting e... Read More about Magnetic anisotropy in antiferromagnetic hexagonal MnTe.

Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films (2017)
Journal Article
Wadley, P., Edmonds, K., Shahedkhah, M., Campion, R., Gallagher, B., Železný, J., …Dhesi, S. (in press). Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films. Scientific Reports, 7, Article 11147. https://doi.org/10.1038/s41598-017-11653-8

Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is observed which i... Read More about Control of antiferromagnetic spin axis orientation in bilayer Fe/CuMnAs films.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility (2017)
Journal Article
Olejnik, K., Schuler, V., Marti, X., Novák, V., Kaspar, Z., Wadley, P., …Jungwirth, T. (2017). Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility. Nature Communications, 8, Article 15434. https://doi.org/10.1038/ncomms15434

Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativ... Read More about Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility.

Inertial displacement of a domain wall excited byultra-short circularly polarized laser pulses (2017)
Journal Article
Janda, T., Roy, P., Otxoa, R., Soban, Z., Ramsay, A., Irvine, A., …Wunderlich, J. (2017). Inertial displacement of a domain wall excited byultra-short circularly polarized laser pulses. Nature Communications, 8, Article 15226. https://doi.org/10.1038/ncomms15226

Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magnetoelectronic devices with high speed and long distance transmission of information encoded in circula... Read More about Inertial displacement of a domain wall excited byultra-short circularly polarized laser pulses.

Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet (2017)
Journal Article
Šmejkal, L., Železný, J., Sinova, J., & Jungwirth, T. (2017). Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet. Physical Review Letters, 118(10), https://doi.org/10.1103/PhysRevLett.118.106402

Spin orbitronics and Dirac quasiparticles are two fields of condensed matter physics initiated independently about a decade ago. Here we predict that Dirac quasiparticles can be controlled by the spin-orbit torque reorientation of the Néel vector in... Read More about Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet.

Concepts of antiferromagnetic spintronics (2017)
Journal Article
Gomonay, O., Jungwirth, T., & Sinova, J. (in press). Concepts of antiferromagnetic spintronics. physica status solidi (RRL) - Rapid Research Letters, 11(4), Article 1700022. https://doi.org/10.1002/pssr.201700022

Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical, optical or other means of control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discove... Read More about Concepts of antiferromagnetic spintronics.

Imaging current-induced switching of antiferromagnetic domains in CuMnAs (2017)
Journal Article
Grzybowski, M., Wadley, P., Edmonds, K., Beardsley, R., Hills, V. A., Campion, R., …Dhesi, S. (2017). Imaging current-induced switching of antiferromagnetic domains in CuMnAs. Physical Review Letters, 118(5), Article 057701. https://doi.org/10.1103/PhysRevLett.118.057701

The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using X-ray Magnetic Linear Dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of t... Read More about Imaging current-induced switching of antiferromagnetic domains in CuMnAs.

Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet (2017)
Journal Article
Saidl, V., Němec, P., Wadley, P., Hills, V., Campion, R. P., Novák, V., …Jungwirth, T. (2017). Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet. Nature Photonics, 11(2), 91-96. https://doi.org/10.1038/nphoton.2016.255

Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices.1-10 Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead... Read More about Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet.

Spin-orbit torques in locally and globally non-centrosymmetric crystals: antiferromagnets and ferromagnets (2017)
Journal Article
Železný, J., Gao, H., Manchon, A., Freimuth, F., Mokrousov, Y., Zemen, J., …Jungwirth, T. (2017). Spin-orbit torques in locally and globally non-centrosymmetric crystals: antiferromagnets and ferromagnets. Physical Review B, 95(1), Article 014403. https://doi.org/10.1103/PhysRevB.95.014403

One of the main obstacles that prevents practical applications of antiferromagnets is the dfficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. Železný et al., PRL 113, 157201 (2014)], the electric... Read More about Spin-orbit torques in locally and globally non-centrosymmetric crystals: antiferromagnets and ferromagnets.

Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn (2016)
Journal Article
Galceran, R., Fina, I., Cisneros-Fernandez, J., Bozzo, B., Frontera, C., Lopez-Mir, L., …Martinez, B. (2016). Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn. Scientific Reports, 6, Article 35471. https://doi.org/10.1038/srep35471

Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferroma... Read More about Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction (2016)
Journal Article
Nádvornik, L., Olejnik, K., Němec, P., Novák, V., Janda, T., Wunderlich, J., …Jungwirth, T. (2016). Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction. Physical Review B, 94(7), Article 075306. https://doi.org/10.1103/PhysRevB.94.075306

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p-n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded b... Read More about Enhancement of the spin Hall voltage in a reverse-biased planar p-n junction.

Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region (2016)
Journal Article
Saidl, V., Brajer, M., Horák, L., Reichlová, H., Výborný, K., Veis, M., …Němec, P. (2016). Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region. New Journal of Physics, 18(83017), 1-11. https://doi.org/10.1088/1367-2630/18/8/083017

Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large chan... Read More about Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region.

Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks (2016)
Journal Article
Reichlová, H., Novák, V., Kurosaki, Y., Yamada, M., Yamamoto, H., Nishide, A., …Jungwirth, T. (2016). Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks. Materials Research Express, 3, Article 076406. https://doi.org/10.1088/2053-1591/3/7/076406

Weinvestigate the thickness and temperature dependence of a series of Ni0.8Fe0.2/Ir0.2Mn0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM tAFM) in order to explore the exchange coupling strengths in tunneling an... Read More about Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks.

High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques (2016)
Journal Article
Gomonay, O., Jungwirth, T., & Sinova, J. (2016). High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques. Physical Review Letters, 117(1), Article 017202. https://doi.org/10.1103/PhysRevLett.117.017202

We demonstrate the possibility to drive an antiferromagnetic domain wall at high velocities by fieldlike Néel spin-orbit torques. Such torques arise from current-induced local fields that alternate their orientation on each sublattice of the antiferr... Read More about High Antiferromagnetic Domain Wall Velocity Induced by Néel Spin-Orbit Torques.

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe (2016)
Journal Article
Kriegner, D., Výborný, K., Olejnik, K., Reichlová, H., Novák, V., Marti, X., …Jungwirth, T. (in press). Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe. Nature Communications, 7(11623), https://doi.org/10.1038/ncomms11623

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memo... Read More about Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.

Room-temperature spin-orbit torque in NiMnSb (2016)
Journal Article
Ciccarelli, C., Anderson, L., Tshitoyan, V., Ferguson, A., Gerhard, F., Gould, C., …Jungwirth, T. (in press). Room-temperature spin-orbit torque in NiMnSb. Nature Physics, 12, https://doi.org/10.1038/nphys3772

Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, the two atomic sites in the unit cell of these crystals form inversion partners which gives... Read More about Room-temperature spin-orbit torque in NiMnSb.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.

Antiferromagnetic structure in tetragonal CuMnAs thin films (2015)
Journal Article
Wadley, P., Hills, V. A., Shahedkhah, M. R., Edmonds, K. W., Campion, R. P., Novák, V., …Jungwirth, T. (2015). Antiferromagnetic structure in tetragonal CuMnAs thin films. Scientific Reports, 5(1), Article 17079. https://doi.org/10.1038/srep17079

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetrag... Read More about Antiferromagnetic structure in tetragonal CuMnAs thin films.

Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As (2014)
Journal Article
Tesařová, N., Butkovičová, D., Campion, R. P., Rushforth, A. W., Edmonds, K. W., Wadley, P., …Němec, P. (2014). Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As. Physical review B: Condensed matter and materials physics, 90(15), Article 155203. https://doi.org/10.1103/physrevb.90.155203

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has an easy axis in the sample plane, and (Ga,Mn)(As,P), which has an easy axis perpendicular to the sample plane.We use an op... Read More about Comparison of micromagnetic parameters of the ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As.

Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets (2014)
Journal Article
Železný, J., Gao, H., Výborný, K., Zemen, J., Mašek, J., Manchon, A., …Jungwirth, T. (2014). Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets. Physical Review Letters, 113(15), Article 157201. https://doi.org/10.1103/PhysRevLett.113.157201

We predict that a lateral electrical current in antiferromagnets can induce nonequilibrium Néel-order fields, i.e., fields whose sign alternates between the spin sublattices, which can trigger ultrafast spin-axis reorientation. Based on microscopic t... Read More about Relativistic Neel-Order Fields Induced by Electrical Current in Antiferromagnets.

Anisotropic magnetoresistance in an antiferromagnetic semiconductor (2014)
Journal Article
Fina, I., Marti, X., Yi, D., Liu, J., Chu, J. H., Rayan-Serrao, C., …Ramesh, R. (2014). Anisotropic magnetoresistance in an antiferromagnetic semiconductor. Nature Communications, 5, Article 4671. https://doi.org/10.1038/ncomms5671

Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental obs... Read More about Anisotropic magnetoresistance in an antiferromagnetic semiconductor.

An antidamping spin–orbit torque originating from the Berry curvature (2014)
Journal Article
Kurebayashi, H., Sinova, J., Fang, D., Irvine, A. C., Skinner, T. D., Wunderlich, J., …Jungwirth, T. (2014). An antidamping spin–orbit torque originating from the Berry curvature. Nature Nanotechnology, 9(3), 211-217. https://doi.org/10.1038/nnano.2014.15

Magnetization switching at the interface between ferromagnetic and paramagnetic metals, controlled by current-induced torques, could be exploited in magnetic memory technologies. Compelling questions arise regarding the role played in the switching b... Read More about An antidamping spin–orbit torque originating from the Berry curvature.

Room-temperature antiferromagnetic memory resistor (2014)
Journal Article
Marti, X., Fina, I., Frontera, C., Liu, J., Wadley, P., He, Q., …Ramesh, R. (2014). Room-temperature antiferromagnetic memory resistor. Nature Materials, 13(4), 367-374. https://doi.org/10.1038/nmat3861

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical me... Read More about Room-temperature antiferromagnetic memory resistor.