Professor Peter Beton's Outputs (9)

Adsorption of Hexacontane on Hexagonal Boron Nitride (2018)
Journal Article
Albar, J. D., Korolkov, V. V., Baldoni, M., Watanabe, K., Taniguchi, T., Besley, E., & Beton, P. H. (2018). Adsorption of Hexacontane on Hexagonal Boron Nitride. Journal of Physical Chemistry C, 122(48), 27575-27581. https://doi.org/10.1021/acs.jpcc.8b10167

© 2018 American Chemical Society. We have investigated the adsorption of hexacontane (C60H122) on hexagonal boron nitride (hBN) using atomic force microscopy (AFM). The molecules can be deposited either by sublimation or from solution and form lamell... Read More about Adsorption of Hexacontane on Hexagonal Boron Nitride.

The growth and fluorescence of phthalocyanine monolayers, thin films and multilayers on hexagonal boron nitride (2018)
Journal Article
Alkhamisi, M., Korolkov, V. V., Nizovtsev, A. S., Kerfoot, J., Taniguchi, T., Watanabe, K., Besley, N. A., Besley, E., & Beton, P. H. (2018). The growth and fluorescence of phthalocyanine monolayers, thin films and multilayers on hexagonal boron nitride. Chemical Communications, 54(85), 12021-12024. https://doi.org/10.1039/C8CC06304D

Free-base phthalocyanine forms distinct interfacial phases and thin films on hexagonal boron nitride including a monolayer arrangement as determined using high resolution atomic force microscopy. The phases reveal significant differences in photolumi... Read More about The growth and fluorescence of phthalocyanine monolayers, thin films and multilayers on hexagonal boron nitride.

Coherent acoustic phonons in van der Waals nanolayers and heterostructures (2018)
Journal Article
Greener, J. D., Akimov, A. V., Gusev, V., Kudrynskyi, Z., Beton, P. H., Kovalyuk, Z. D., Taniguchi, T., Watanabe, K., Kent, A., & Patanè, A. (2018). Coherent acoustic phonons in van der Waals nanolayers and heterostructures. Physical Review B, 98(7), Article 075408. https://doi.org/10.1103/PhysRevB.98.075408

Terahertz (THz) and sub-THz coherent acoustic phonons have been successfully used as probes of various quantum systems. Since their wavelength is in the nanometer range, they can probe nanostructures buried below a surface with nanometer resolution a... Read More about Coherent acoustic phonons in van der Waals nanolayers and heterostructures.

Substrate-induced shifts and screening in the fluorescence spectra of supramolecular adsorbed organic monolayers (2018)
Journal Article
Kerfoot, J., Korolkov, V. V., Nizovtsev, A. S., Jones, R., Taniguchi, T., Watanabe, K., Lesanovsky, I., Olmos, B., Besley, N. A., Besley, E., & Beton, P. H. (2018). Substrate-induced shifts and screening in the fluorescence spectra of supramolecular adsorbed organic monolayers. Journal of Chemical Physics, 149(5), Article 054701. https://doi.org/10.1063/1.5041418

We have investigated the influence of the substrate on the fluorescence of adsorbed organic molecules. Monolayer films of perylene-3,4,9,10-tetracarboxylic-3,4,9,10-diimide (PTCDI), a supramolecular network formed from PTCDI and melamine, and perylen... Read More about Substrate-induced shifts and screening in the fluorescence spectra of supramolecular adsorbed organic monolayers.

High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes (2018)
Journal Article
Cheng, T. S., Summerfield, A., Mellor, C. J., Khlobystov, A. N., Eaves, L., Foxon, C. T., Beton, P. H., & Novikov, S. V. (2018). High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes. Materials, 11(7), https://doi.org/10.3390/ma11071119

Hexagonal boron nitride (hBN) has attracted much attention as a key component in van der Waals heterostructures and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes.

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure (2018)
Journal Article
Pierucci, D., Zribi, J., Henck, H., Chaste, J., Silly, M. G., Bertran, F., Le Fevre, P., Gil, B., Summerfield, A., Beton, P. H., Novikov, S. V., Cassabois, G., Rault, J. E., & Ouerghi, A. (2018). Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure. Applied Physics Letters, 112(25), https://doi.org/10.1063/1.5029220

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (A... Read More about Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure.

Moiré-modulated conductance of hexagonal boron nitride tunnel barriers (2018)
Journal Article
Summerfield, A., Kozikov, A., Cheng, T. S., Davies, A., Cho, Y.-J., Khlobystov, A. N., Mellor, C. J., Foxon, C. T., Watanabe, K., Taniguchi, T., Eaves, L., Novoselov, K. S., Novikov, S. V., & Beton, P. H. (in press). Moiré-modulated conductance of hexagonal boron nitride tunnel barriers. Nano Letters, https://doi.org/10.1021/acs.nanolett.8b01223

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hB... Read More about Moiré-modulated conductance of hexagonal boron nitride tunnel barriers.

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe (2018)
Journal Article
Balakrishnan, N., Steer, E. D., Smith, E. F., Kudrynskyi, Z. R., Kovalyuk, Z. D., Eaves, L., Patanè, A., & Beton, P. H. (2018). Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials, 5(3), https://doi.org/10.1088/2053-1583/aac479

We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different p... Read More about Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe.

High-temperature molecular beam epitaxy of hexagonal boron nitride layers (2018)
Journal Article
Cheng, T. S., Summerfield, A., Mellor, C. J., Davies, A., Khlobystov, A. N., Eaves, L., Foxon, C. T., Beton, P. H., & Novikov, S. V. (in press). High-temperature molecular beam epitaxy of hexagonal boron nitride layers. Journal of Vacuum Science and Technology B, 36(2), Article 02D103-1. https://doi.org/10.1116/1.5011280

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much attention due to applications in graphene-based monolayer thick 2D-structures and at the same time as a wide band gap material for deep-ultraviolet device (DUV) a... Read More about High-temperature molecular beam epitaxy of hexagonal boron nitride layers.