All Outputs (3)

Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design (2023)
Presentation / Conference Contribution
Fayyaz, A., Li, Y., Evans, P., Watson, A., Wheeler, P., & Gerada, C. (2023). Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design. In 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). https://doi.org/10.1109/WiPDAAsia58218.2023.10261906

This paper aims to investigate the current imbalance within parallel connected common-source configuration of SiC Power MOSFET switches using double pulse transient operation. Mismatches in electro-thermal parameters e.g., threshold voltage (Vth and... Read More about Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design.

Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances (2023)
Presentation / Conference Contribution
Almpanis, I., Evans, P., Li, K., & Lophitis, N. (2023). Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances. In 2023 IEEE Design Methodologies Conference (DMC). https://doi.org/10.1109/dmc58182.2023.10412584

This paper presents a behavioural silicon carbide (SiC) IGBT model that utilizes voltage and current dependent capacitances to simulate its switching characteristics, and a voltage dependent current source to simulate the static characteristics. The... Read More about Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances.

10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency (2023)
Journal Article
Almpanis, I., Evans, P., Antoniou, M., Gammon, P., Empringham, L., Undrea, F., …Lophitis, N. (2023). 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency. Key Engineering Materials, 946, 125-133. https://doi.org/10.4028/p-21h5lt

10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of... Read More about 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency.