All Outputs (3)

Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models (2020)
Presentation / Conference Contribution
Jalal, B., Greedy, S., & Evans, P. (2020, November). Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models. Presented at 2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL), Aalborg, Denmark

We present an innovative method to allow real-time visualisation of temperature fields on power electronic circuits using augmented reality. A real-time time-domain simulation incorporating the Block Arnoldi model order reduction techniques is implem... Read More about Real-Time Thermal Imaging Using Augmented Reality and Accelerated 3D Models.

Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability (2020)
Journal Article
Sen, S., Evans, P. L., & Johnson, C. M. (2020). Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability. IET Electrical Systems in Transportation, 10(3), 268-274. https://doi.org/10.1049/iet-est.2019.0043

© The Institution of Engineering and Technology 2020. Geographically distributed hardware-in-the-loop (HIL) testing has the potential to allow hybrid vehicle powertrain components (battery, motor drive, and engine) to be developed at geographically r... Read More about Multi‐frequency averaging (MFA) model of a generic electric vehicle powertrain suitable under variable frequency of averaging developed for remote operability.

Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter (2020)
Journal Article
Li, K., Videt, A., Idir, N., Evans, P., & Johnson, M. (2020). Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter. IEEE Transactions on Power Electronics, 35(9), 9652-9662. https://doi.org/10.1109/TPEL.2019.2961604

Because of trapped charges in GaN transistor structure, device dynamic ON-state resistance RDSon is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to red... Read More about Accurate Measurement of Dynamic ON-state Resistance of GaN Devices under Reverse and Forward Conduction in High Frequency Power Converter.