All Outputs (2)

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content (2008)
Journal Article
Fay, M. W., Han, Y., Brown, P. D., Harrison, I., Hilton, K., Munday, A., …Martin, T. (2008). Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content. Journal of Applied Physics, 103(7), https://doi.org/10.1063/1.2890978

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, A... Read More about Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content.

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs (2008)
Book Chapter
Fay, M. W., Han, Y., Novikov, S. V., Edmonds, K., Gallagher, B., Campion, R., …Brown, P. D. (2008). Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs. In A. Cullis, & P. Midgley (Eds.), Microscopy of semiconducting materials 2007: proceedings of the 15th conference, 2-5 April 2007, Cambridge, UK. Springer-Verlag

The growth of cubic (Ga,Mn)N/(001)GaAs heterostructures by plasma assisted molecular beam epitaxy has been appraised as a function of Ga:N ratio, Mn concentration and growth temperature. The combined analytical techniques of EFTEM, EDX, CBED and dark... Read More about Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs.