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Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

Authors

Y. Han

Paul D. Brown paul.brown@nottingham.ac.uk

Ian Harrison

K.P. Hilton

A. Munday

D. Wallis

R.S. Balmer

M.J. Uren

T. Martin



Abstract

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is
examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts.

Journal Article Type Article
Publication Date Apr 1, 2008
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 0021-8979
Publisher AIP Publishing
Peer Reviewed Not Peer Reviewed
Volume 103
Issue 7
APA6 Citation Fay, M. W., Han, Y., Brown, P. D., Harrison, I., Hilton, K., Munday, A., …Martin, T. (2008). Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content. Journal of Applied Physics, 103(7), doi:10.1063/1.2890978
DOI https://doi.org/10.1063/1.2890978
Keywords N-TYPE GAN
FIELD-EFFECT TRANSISTORS
THERMAL-STABILITY
RESISTANCE
TI
MICROSTRUCTURE
MULTILAYERS
PERFORMANCE
Publisher URL http://jap.aip.org/resource/1/japiau/v103/i7/p074501_s1
Copyright Statement Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nd/4.0
Additional Information Pre-print - originally submitted version (August 2007), prior to referee's comments and corrections.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://creativecommons.org/licenses/by-nd/4.0





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