All Outputs (3)

3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing (2022)
Journal Article
Jaafar, A. H., Shao, L., Dai, P., Zhang, T., Han, Y., Beanland, R., …Huang, R. (2022). 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. Nanoscale, 14(46), 17170-17181. https://doi.org/10.1039/d2nr05012a

Memristors are emerging as promising candidates for practical application in reservoir computing systems that are capable of temporal information processing. Here, we experimentally implement a physical reservoir computing system using resistive memr... Read More about 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing.

Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms (2022)
Book Chapter
Gee, A., Jaafar, A. H., & Kemp, N. T. (2022). Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms. In L. O. Chua, R. Tetzlaff, & A. Slavova (Eds.), Memristor Computing Systems (219-244). Springer International Publishing. https://doi.org/10.1007/978-3-030-90582-8_10

Memristors are known for their low-power non-volatile memory operation, high scalability and simple two-terminal geometry. Their ability to emulate the analogue switching and learning properties of biological synapses has also emerged as a significan... Read More about Optical Memristors: Review of Switching Mechanisms and New Computing Paradigms.

Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices (2022)
Presentation / Conference Contribution
Gater, M., Adawi, A. M., & Kemp, N. T. (2022). Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices. In 2022 IEEE International Symposium on Circuits and Systems (ISCAS)

We report on the electrical properties of gated two-terminal multilayered molybdenum disulfide (MoS2) memristor devices having a planar architecture. The approach based on highly dispersed MoS2 flakes drop cast onto a bottom gated Si/SiO2 (100nm) waf... Read More about Capacitive effects and memristive switching in three terminal multilayered MoS 2 devices.