All Outputs (4)

Switching Behaviour of GaN-based Power Converter subject to Current-Collapse Effect in Double-Pulse Test (2019)
Presentation / Conference Contribution
Videt, A., Li, K., Pace, L., Idir, N., Evans, P., & Johnson, M. (2019, July). Switching Behaviour of GaN-based Power Converter subject to Current-Collapse Effect in Double-Pulse Test. Poster presented at Centre for Power Electronics Annual Conference 2019, Loughborough, UK

10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field (2019)
Journal Article
DiMarino, C. M., Mouawad, B., Johnson, C. M., Boroyevich, D., & Burgos, R. (2020). 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field. IEEE Transactions on Power Electronics, 35(6), 6050-6060. https://doi.org/10.1109/tpel.2019.2952633

The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. T... Read More about 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field.

Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module (2019)
Journal Article
DiMarino, C., Mouawad, B., Johnson, C. M., Wang, M., Tan, Y.-S., Lu, G.-Q., Boroyevich, D., & Burgos, R. (2020). Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8(1), 381-394. https://doi.org/10.1109/jestpe.2019.2944138

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium-and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limi... Read More about Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module.

Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules (2019)
Journal Article
Agyakwa, P., Dai, J., Li, J., Mouawad, B., Yang, L., Corfield, M., & Johnson, C. (2019). Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules. Journal of Microscopy, 277(3), 140-153. https://doi.org/10.1111/jmi.12803

© 2019 The Authors. Journal of Microscopy published by John Wiley & Sons Ltd on behalf of Royal Microscopical Society. A time-lapse study of thermomechanical fatigue damage has been undertaken using three-dimensional X-ray computer tomography. Morp... Read More about Three‐dimensional damage morphologies of thermomechanically deformed sintered nanosilver die attachments for power electronics modules.