Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods

Soundararajah, Q Y; Webster, R F; Griffiths, I J; Novikov, S V; Foxon, C T; Cherns, D

Abstract

Two In x Ga1−x N nanorod samples with graded In compositions of x = 0.5–0 (Ga-rich) and x = 0.5–1 (In-rich) grown by molecular beam epitaxy were studied using transmission electron microscopy. The nanorods had a wurtzite crystal structure with growth along 0001 and core–shell structures with an In-rich core and Ga-rich shell. Energy-dispersive x-ray analysis confirmed grading over the entire compositional range and showed that the axial growth rate was primarily determined by the In flux, and the radial growth rate by the Ga flux. There was no evidence of misfit dislocations due to grading, but the strain due to the lattice mismatch between the In-rich core and Ga-rich shell was relaxed by edge dislocations at the core–shell interface with Burgers vectors a and c

Citation

Soundararajah, Q. Y., Webster, R. F., Griffiths, I. J., Novikov, S. V., Foxon, C. T., & Cherns, D. (2018). Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods. Nanotechnology, 29(40), Article 405706. https://doi.org/10.1088/1361-6528/aad38d

• Journal Article Type: Article
• Acceptance Date: Jul 16, 2018
• Online Publication Date: Jul 30, 2018
• Publication Date: Oct 5, 2018
• Deposit Date: Aug 10, 2018
• Publicly Available Date: Jul 31, 2019
• Journal: Nanotechnology
• Print ISSN: 0957-4484
• Electronic ISSN: 1361-6528
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 29
• Issue: 40
• Article Number: 405706
• DOI: https://doi.org/10.1088/1361-6528/aad38d
• Keywords: Mechanical Engineering; Electrical and Electronic Engineering; General Materials Science; Mechanics of Materials; Bioengineering; General Chemistry
• Public URL: https://nottingham-repository.worktribe.com/output/989707
• Publisher URL: http://iopscience.iop.org/article/10.1088/1361-6528/aad38d/meta