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Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods

Soundararajah, Q Y; Webster, R F; Griffiths, I J; Novikov, S V; Foxon, C T; Cherns, D


Q Y Soundararajah

R F Webster

I J Griffiths

C T Foxon

D Cherns


Two In x Ga1−x N nanorod samples with graded In compositions of x = 0.5–0 (Ga-rich) and x = 0.5–1 (In-rich) grown by molecular beam epitaxy were studied using transmission electron microscopy. The nanorods had a wurtzite crystal structure with growth along 0001 and core–shell structures with an In-rich core and Ga-rich shell. Energy-dispersive x-ray analysis confirmed grading over the entire compositional range and showed that the axial growth rate was primarily determined by the In flux, and the radial growth rate by the Ga flux. There was no evidence of misfit dislocations due to grading, but the strain due to the lattice mismatch between the In-rich core and Ga-rich shell was relaxed by edge dislocations at the core–shell interface with Burgers vectors a and c


Soundararajah, Q. Y., Webster, R. F., Griffiths, I. J., Novikov, S. V., Foxon, C. T., & Cherns, D. (2018). Composition and strain relaxation of In x Ga1−x N graded core–shell nanorods. Nanotechnology, 29(40), Article 405706.

Journal Article Type Article
Acceptance Date Jul 16, 2018
Online Publication Date Jul 30, 2018
Publication Date Oct 5, 2018
Deposit Date Aug 10, 2018
Publicly Available Date Jul 31, 2019
Journal Nanotechnology
Print ISSN 0957-4484
Electronic ISSN 1361-6528
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 29
Issue 40
Article Number 405706
Keywords Mechanical Engineering; Electrical and Electronic Engineering; General Materials Science; Mechanics of Materials; Bioengineering; General Chemistry
Public URL
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