Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

Hamer, Matthew James; Tovari, Endre; Zhu, Mengjian; Thompson, Michael; Mayorov, Alexander; Prance, Jonathon; Lee, Yongjin; Haley, Richard P.; Kudrynskyi, Zakhar R.; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D.; Ensslin, Klaus; Kretinin, Andrey V.; Geim, Andre; Gorbachev, R.V.

Abstract

© Copyright 2018 American Chemical Society. Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Citation

Hamer, M. J., Tovari, E., Zhu, M., Thompson, M., Mayorov, A., Prance, J., …Gorbachev, R. (2018). Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures. Nano Letters, 18(6), 3950-3955. https://doi.org/10.1021/acs.nanolett.8b01376

• Journal Article Type: Article
• Acceptance Date: May 15, 2018
• Online Publication Date: May 15, 2018
• Publication Date: Jun 13, 2018
• Deposit Date: May 16, 2018
• Publicly Available Date: May 16, 2019
• Journal: Nano Letters
• Print ISSN: 1530-6984
• Electronic ISSN: 1530-6992
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 18
• Issue: 6
• Pages: 3950-3955
• DOI: https://doi.org/10.1021/acs.nanolett.8b01376
• Keywords: Two-Dimensional Materials, Quantum Dots, Quantum Point Contacts, Charge Quantization, Indium Selenide, Electronic Devices
• Public URL: https://nottingham-repository.worktribe.com/output/932715
• Publisher URL: https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b01376
• Additional Information: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © 2018 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b01376