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High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

Liu, Lei; Yang, Chao; Patanè, Amalia; Yu, Zhiguo; Yan, Faguang; Wang, Kaiyou; Lu, Hongxi; Li, Jinmin; Zhao, Lixia

Authors

Lei Liu

Chao Yang

Amalia Patanè

Zhiguo Yu

Faguang Yan

Kaiyou Wang

Hongxi Lu

Jinmin Li

Lixia Zhao



Abstract

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous GaN. The specific detectivity of our devices under UV-illumination reaches values of up to 5.3×1014 Jones. We attribute this high specific detectivity to the properties of the mesoporous GaN/metal contact interface: the trapping of photo-generated holes at the interface lowers the Schottky barrier height thus causing a large internal gain. The high detectivity along with the simple fabrication process make these laterally mesoporous GaN photodetectors of great potential for applications that require selective detection of weak optical signals in the UV range.

Journal Article Type Article
Publication Date Mar 24, 2017
Journal Nanoscale
Print ISSN 2040-3364
Electronic ISSN 2040-3372
Publisher Royal Society of Chemistry
Peer Reviewed Peer Reviewed
Volume 24
APA6 Citation Liu, L., Yang, C., Patanè, A., Yu, Z., Yan, F., Wang, K., …Zhao, L. (2017). High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN. Nanoscale, 24, doi:10.1039/c7nr01290j
DOI https://doi.org/10.1039/c7nr01290j
Publisher URL http://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C7NR01290J#!divAbstract
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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