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Performance benchmark of Si IGBTs vs. SiC MOSFETs in small-scale wind energy conversion systems

Hussein, Abdallah; Castellazzi, Alberto; Wheeler, Patrick; Klumpner, Christian

Authors

Abdallah Hussein Abdallah.Hussein@nottingham.ac.uk

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk



Abstract

Modern power electronics devices based on SiC power MOSFETs technology become more demanding in the last few years. They show better performance over Si-IGBTs on renewable energy power conversion systems due to their higher switching frequency, higher temperature capability, higher power density and higher reliability. This paper presents a benchmarking of SiC-MOSFET and Si-IGBT power devices with the voltage rating of 1200V in 2-Level Full-Bridge (2L-FB) inverter for 10kW small scale wind turbine. By simulation, the inverter performance is evaluated in the presence of the wind speed distribution profile and the reference switching frequency value for SiC devices in this topology at this power level is determined. The results show that the SiC solution can improve the efficiency, save energy and reduce the size and cost due to high switching frequency and temperature capabilities.

Citation

Hussein, A., Castellazzi, A., Wheeler, P., & Klumpner, C. (in press). Performance benchmark of Si IGBTs vs. SiC MOSFETs in small-scale wind energy conversion systems

Conference Name 17th International Conference on Power Electronics and Motion Control
End Date Sep 30, 2016
Acceptance Date May 31, 2016
Online Publication Date Nov 24, 2016
Deposit Date Feb 3, 2017
Publicly Available Date Feb 3, 2017
Peer Reviewed Peer Reviewed
Public URL http://eprints.nottingham.ac.uk/id/eprint/40236
Publisher URL http://ieeexplore.ieee.org/document/7752124/
Related Public URLs http://www.ieee-pemc2016.org/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
Additional Information © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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