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Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs

Trentin, Andrew; Zanchetta, Pericle; Empringham, Lee; De Lillo, Liliana; Wheeler, Patrick; Clare, Jon C.

Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs Thumbnail


Authors

ANDREW TRENTIN andrew.trentin@nottingham.ac.uk
Senior Application Engineers in N Industrialisation of Electrical Machines and Drives

Jon C. Clare



Abstract

This paper presents an experimental comparison between a Direct Matrix Converter and an Indirect Matrix Converter in terms of semiconductor devices thermal cycling. Both converters have been designed and built using SiC MOSFETs; the Indirect Matrix Converter has also been tested using a hybrid solution with Silicon IGBT on the input stage and SiC MOSFETs on the output stage.

Citation

Trentin, A., Zanchetta, P., Empringham, L., De Lillo, L., Wheeler, P., & Clare, J. C. (2016). Experimental comparison of devices thermal cycling in direct matrix converters (DMC) and Indirect Matrix Converters (IMC) using SiC MOSFETs.

Conference Name 2016 IEEE Energy Conversion Congress and Exposition (ECCE)
End Date Sep 22, 2016
Acceptance Date May 1, 2016
Online Publication Date Feb 16, 2017
Publication Date Sep 18, 2016
Deposit Date Jun 28, 2017
Publicly Available Date Jun 28, 2017
Peer Reviewed Peer Reviewed
Public URL https://nottingham-repository.worktribe.com/output/817291
Publisher URL http://ieeexplore.ieee.org/document/7855094/
Contract Date Jun 28, 2017

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