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Experimental efficiency comparison between a direct matrix converter and an indirect matrix converter using both Si IGBTs and SiC MOSFETs

Trentin, Andrew; Liliana de Lillio, Liliana; Empringham, Lee; Zanchetta, Pericle; Wheeler, Patrick; Clare, Jon C.

Experimental efficiency comparison between a direct matrix converter and an indirect matrix converter using both Si IGBTs and SiC MOSFETs Thumbnail


Authors

ANDREW TRENTIN andrew.trentin@nottingham.ac.uk
Senior Application Engineers in N Industrialisation of Electrical Machines and Drives

LEE EMPRINGHAM LEE.EMPRINGHAM@NOTTINGHAM.AC.UK
Professor of Power Conversion Technologies

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PATRICK WHEELER pat.wheeler@nottingham.ac.uk
Professor of Power Electronic Systems

Jon C. Clare



Abstract

This paper presents an experimental efficiency comparison study between two different direct AC-AC converter topologies: a direct matrix converter (DMC) and an indirect matrix converter (IMC). The evaluation is performed under variable load conditions using both discrete Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETs working at power levels up to 9 kW. Each loss measurement is carried out using two power analyzers: one placed at the input and one at the output of the converter under study. To facilitate this measurement an output filter was necessary in addition to the normal input filter. Both converters are modulated the same traditional symmetrical space vector approach and feature an identical input/output filter design.

Journal Article Type Article
Conference Name ECCE 2015
Conference Location Montreal, Canada
Acceptance Date May 9, 2016
Online Publication Date May 27, 2016
Publication Date Oct 1, 2016
Deposit Date Jun 13, 2016
Publicly Available Date Jun 13, 2016
Journal IEEE Transactions on Industry Applications
Print ISSN 0093-9994
Electronic ISSN 1939-9367
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 52
Issue 5
Pages 4135-4145
DOI https://doi.org/10.1109/TIA.2016.2573752
Keywords Insulated gate bipolar transistors, MOSFET, Matrix converters, Modulation, Silicon, Silicon carbide, Switches
Public URL https://nottingham-repository.worktribe.com/output/788429
Publisher URL https://ieeexplore.ieee.org/document/7480421
Related Public URLs http://www.ieee-ecce.org/2015/
Additional Information (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

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