Skip to main content

Research Repository

Advanced Search

Experimental efficiency comparison between a direct matrix converter and an indirect matrix converter using both Si IGBTs and SiC MOSFETs

Trentin, Andrew; Liliana de Lillio, Liliana; Empringham, Lee; Zanchetta, Pericle; Wheeler, Patrick; Clare, Jon C.

Authors

Andrew Trentin andrew.trentin@nottingham.ac.uk

Liliana Liliana de Lillio

Lee Empringham lee.empringham@nottingham.ac.uk

Pericle Zanchetta pericle.zanchetta@nottingham.ac.uk

Patrick Wheeler pat.wheeler@nottingham.ac.uk

Jon C. Clare jon.clare@nottingham.ac.uk



Abstract

This paper presents an experimental efficiency comparison study between two different direct AC-AC converter topologies: a direct matrix converter (DMC) and an indirect matrix converter (IMC). The evaluation is performed under variable load conditions using both discrete Silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETs working at power levels up to 9 kW. Each loss measurement is carried out using two power analyzers: one placed at the input and one at the output of the converter under study. To facilitate this measurement an output filter was necessary in addition to the normal input filter. Both converters are modulated the same traditional symmetrical space vector approach and feature an identical input/output filter design.

Journal Article Type Article
Publication Date Oct 1, 2016
Journal IEEE Transactions on Industry Applications
Print ISSN 0093-9994
Electronic ISSN 1939-9367
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 52
Issue 5
Pages 4135-4145
APA6 Citation Trentin, A., Liliana de Lillio, L., Empringham, L., Zanchetta, P., Wheeler, P., & Clare, J. C. (2016). Experimental efficiency comparison between a direct matrix converter and an indirect matrix converter using both Si IGBTs and SiC MOSFETs. IEEE Transactions on Industry Applications, 52(5), 4135-4145. https://doi.org/10.1109/TIA.2016.2573752
DOI https://doi.org/10.1109/TIA.2016.2573752
Keywords Insulated gate bipolar transistors, MOSFET, Matrix converters, Modulation, Silicon, Silicon carbide, Switches
Publisher URL https://ieeexplore.ieee.org/document/7480421
Related Public URLs http://www.ieee-ecce.org/2015/
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information (c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

Files

Experimental Comparison between Direct Matrix Converter and Indirect Matrix Converter Based On Efficiency using Si IGBT and SiC MOSFETs.pdf (1.3 Mb)
PDF

Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





You might also like



Downloadable Citations

;