Intrinsic magnetic refrigeration of a single electron transistor

Ciccarelli, C.; Campion, R.P.; Gallagher, B.L.; Ferguson, A.J.

Abstract

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

Citation

Ciccarelli, C., Campion, R., Gallagher, B., & Ferguson, A. (2016). Intrinsic magnetic refrigeration of a single electron transistor. Applied Physics Letters, 108(5), Article 053103. https://doi.org/10.1063/1.4941289

• Journal Article Type: Article
• Acceptance Date: Jan 21, 2016
• Publication Date: Feb 3, 2016
• Deposit Date: Aug 8, 2016
• Publicly Available Date: Aug 8, 2016
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 108
• Issue: 5
• Article Number: 053103
• DOI: https://doi.org/10.1063/1.4941289
• Public URL: https://nottingham-repository.worktribe.com/output/777207
• Publisher URL: http://scitation.aip.org/content/aip/journal/apl/108/5/10.1063/1.4941289
• Contract Date: Aug 8, 2016