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Intrinsic magnetic refrigeration of a single electron transistor

Ciccarelli, C.; Campion, R.P.; Gallagher, B.L.; Ferguson, A.J.

Authors

C. Ciccarelli

R.P. Campion

B.L. Gallagher

A.J. Ferguson



Abstract

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

Journal Article Type Article
Publication Date Feb 3, 2016
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 108
Issue 5
Article Number 053103
APA6 Citation Ciccarelli, C., Campion, R., Gallagher, B., & Ferguson, A. (2016). Intrinsic magnetic refrigeration of a single electron transistor. Applied Physics Letters, 108(5), https://doi.org/10.1063/1.4941289
DOI https://doi.org/10.1063/1.4941289
Publisher URL http://scitation.aip.org/content/aip/journal/apl/108/5/10.1063/1.4941289
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf

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Intrinsic magnetic refrigeration of a single electron transistor Ciccarelli et al APL 2016.pdf (1.1 Mb)
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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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