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Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

Gurpinar, Emre; Castellazzi, Alberto

Authors

Emre Gurpinar emre.gurpinar@nottingham.ac.uk

Alberto Castellazzi alberto.castellazzi@nottingham.ac.uk



Abstract

In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume and dead-time effect for each technology is evaluated. Gate driver study shows that GaN has the lowest gate driver losses above 100kHz and below 100kHz, SiC has lowest gate losses. GaN has the best switching performance among three technologies that allows high efficiency at high frequency applications. GaN based inverter operated at 160kHz switching frequency with 97.3% efficiency at 2.5kW output power. Performance of three device technologies at different temperature, switching frequency and load conditions shows that heat sink volume of the converter can be reduced by 2.5 times by switching from Si to GaN solution at 60°C case temperature, and for SiC and GaN, heat sink volume can be reduced by 2.36 and 4.92 times respectively by increasing heat sink temperature to 100°C. Output filter volume can be reduced by 43% with 24W, 26W and 61W increase in device power loss for GaN, SiC and Si based converters respectively. WBG devices allow reduction of harmonic distortion at output current from 3.5% to 1.5% at 100kHz.

Journal Article Type Article
Publication Date Dec 7, 2015
Journal IEEE Transactions on Power Electronics
Print ISSN 0885-8993
Electronic ISSN 0885-8993
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 31
Issue 10
Pages 7148-7160
APA6 Citation Gurpinar, E., & Castellazzi, A. (2015). Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs. IEEE Transactions on Power Electronics, 31(10), 7148-7160. doi:10.1109/TPEL.2015.2506400
DOI https://doi.org/10.1109/TPEL.2015.2506400
Keywords Multilevel systems, Power conversion, Power electronics, Power MOSFETs, Insulated Gate Bipolar Transis¬tors, Power Semiconductor Switches, Inverters.
Publisher URL http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7348703
Copyright Statement Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf
Additional Information ©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

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Copyright Statement
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf





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