Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors

Mori, N.; Hill, R.J.A.; Patan�, Amalia; Eaves, Laurence

Abstract

We perform ensemble Monte Carlo simulations of electron diffusion in high mobility inhomogeneous InAs layers. Electrons move ballistically for short times while moving diffusively for sufficiently long times. We find that electrons show anomalous diffusion in the intermediate time domain. Our study suggests that electrons in inhomogeneous InAs could be used to experimentally explore generalized random walk phenomena, which, some studies assert, also occur naturally in the motion of animal foraging paths.

Citation

Mori, N., Hill, R., Patanè, A., & Eaves, L. (2015). Monte Carlo study on anomalous carrier diffusion in inhomogeneous semiconductors. Journal of Physics: Conference Series, 647, Article 012059. https://doi.org/10.1088/1742-6596/647/1/012059

• Journal Article Type: Article
• Acceptance Date: Sep 16, 2015
• Publication Date: Oct 13, 2015
• Deposit Date: Apr 21, 2017
• Publicly Available Date: Apr 21, 2017
• Journal: Journal of Physics: Conference Series
• Print ISSN: 1742-6588
• Electronic ISSN: 1742-6596
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 647
• Article Number: 012059
• DOI: https://doi.org/10.1088/1742-6596/647/1/012059
• Public URL: https://nottingham-repository.worktribe.com/output/763916
• Publisher URL: http://iopscience.iop.org/article/10.1088/1742-6596/647/1/012059/meta
• Contract Date: Apr 21, 2017