Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

Gaskell, Jennifer; Eaves, Laurence; Novoselov, K.S.; Mishchenko, A.; Geim, A.K.; Fromhold, T.M.; Greenaway, M.T.

Abstract

We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

Citation

Gaskell, J., Eaves, L., Novoselov, K., Mishchenko, A., Geim, A., Fromhold, T., & Greenaway, M. (2015). Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators. Applied Physics Letters, 107(10), Article 103105. https://doi.org/10.1063/1.4930230

• Journal Article Type: Article
• Acceptance Date: Aug 25, 2015
• Publication Date: Sep 9, 2015
• Deposit Date: Jul 15, 2016
• Publicly Available Date: Jul 15, 2016
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 107
• Issue: 10
• Article Number: 103105
• DOI: https://doi.org/10.1063/1.4930230
• Public URL: https://nottingham-repository.worktribe.com/output/761682
• Publisher URL: http://scitation.aip.org/content/aip/journal/apl/107/10/10.1063/1.4930230
• Contract Date: Jul 15, 2016