Determining Curie temperatures in dilute ferromagnetic semiconductors: high Curie temperature (Ga,Mn)As
Wang, M.; Marshall, R.A.; Edmonds, K.W.; Rushforth, A.W.; Campion, R.P.; Gallagher, B.L.
In this paper, we use simultaneous magnetometry and electrical transport measurements to critically examine ways in which the Curie temperature (TC) values have been determined in studies of dilute magnetic semiconductors. We show that, in sufficiently homogeneous samples, TC can be accurately determined from remanent magnetization and magnetic susceptibility and from the positions of the peak in the temperature derivative of the resistivity. We also show that the peak of the resistivity does not occur at TC, as illustrated by a (Ga,Mn)As sample for which the peak of the resistivity is at 21361K when TC is only 17861K
|Journal Article Type||Article|
|Publication Date||Apr 3, 2014|
|Journal||Applied Physics Letters|
|Peer Reviewed||Peer Reviewed|
|APA6 Citation||Wang, M., Marshall, R., Edmonds, K., Rushforth, A., Campion, R., & Gallagher, B. (2014). Determining Curie temperatures in dilute ferromagnetic semiconductors: high Curie temperature (Ga,Mn)As. Applied Physics Letters, 104, https://doi.org/10.1063/1.4870521|
|Copyright Statement||Copyright information regarding this work can be found at the following address: http://eprints.nottingh.../end_user_agreement.pdf|
|Additional Information||Determining Curie temperatures in dilute ferromagnetic semiconductors: high Curie temperature (Ga,Mn)As,
M. Wang, R.A. Marshall, K.W. Edmonds, A.W. Rushforth, R.P. Campion, and B.L. Gallagher. Applied Physics Letters 104, 132406 (2014); doi:10.1063/1.4870521.
Copyright information regarding this work can be found at the following address: http://eprints.nottingham.ac.uk/end_user_agreement.pdf
You might also like
Low-energy switching of antiferromagnetic CuMnAs/GaP using sub-10 nanosecond current pulses
Deterministic magnetic domain wall motion induced by pulsed anisotropy energy