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Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T

Yang, Zhuo; Wang, Xueting; Felton, James; Kudrynskyi, Zakhar; Gen, Masaki; Nomura, Toshihiro; Wang, Xinjiang; Eaves, Laurence; Kovalyuk, Zakhar D; Kohama, Yoshimitsu; Zhang, Lijun; Patanè, Amalia

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T Thumbnail


Authors

Zhuo Yang

Xueting Wang

James Felton

Profile image of ZAKHAR KUDRYNSKYI

ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne Mclaren Fellows

Masaki Gen

Toshihiro Nomura

Xinjiang Wang

Laurence Eaves

Zakhar D Kovalyuk

Yoshimitsu Kohama

Lijun Zhang



Abstract

The SnSe2(1-x)S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective masses underlie the quantum behavior of charge carriers and hold great promise in future technologies. However, experimental measurement of these properties remains a challenging task. Here magnetotransmission spectroscopy of SnSe2(1-x)S2x thin films at pulsed magnetic fields B of up to 150 T reveals a large electron-hole reduced cyclotron mass μ∗> 0.454 me (me is the free electron mass). This finding is supported by first-principle calculations of the band structure and by semiclassical Boltzmann transport theory, which predict a pronounced anisotropy of the carrier effective masses and electrical conductivity over two orthogonal directions (namely in the layer plane and out-of-plane) with a different anisotropy for electrons and holes. These properties are unique and important features of this class of compounds and are critical for understanding and using the tunable band structure of SnSe2(1-x)S2x in fundamental and applied research.

Citation

Yang, Z., Wang, X., Felton, J., Kudrynskyi, Z., Gen, M., Nomura, T., …Patanè, A. (2021). Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T. Physical Review B (Condensed Matter), 104(8), Article 085206. https://doi.org/10.1103/PhysRevB.104.085206

Journal Article Type Article
Acceptance Date Aug 4, 2021
Online Publication Date Aug 24, 2021
Publication Date Aug 15, 2021
Deposit Date Aug 6, 2021
Publicly Available Date Aug 15, 2021
Journal Physical Review B
Print ISSN 0163-1829
Electronic ISSN 2469-9969
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 104
Issue 8
Article Number 085206
DOI https://doi.org/10.1103/PhysRevB.104.085206
Public URL https://nottingham-repository.worktribe.com/output/5957251
Publisher URL https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.085206

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