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Magnetism and magnetoresistance in the critical region of a dilute ferromagnet

Wang, M.; Howells, B.; Marshall, R. A.; Taylor, J. M.; Edmonds, K. W.; Rushforth, A. W.; Campion, R. P.; Gallagher, B. L.


M. Wang

B. Howells

R. A. Marshall

J. M. Taylor

Associate Professor & Reader in Physics

B. L. Gallagher


We present detailed experimental measurements and simulations of the field-dependent magnetization and magnetoresistance in the vicinity of the Curie temperature in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. The observed dependence of the magnetization on external magnetic field and temperature is consistent with three-dimensional Heisenberg equation of state calculations including a narrow distribution of critical temperatures. The magnetoresistance shows a peak at the Curie temperature due to the suppression of magnetic scattering in an applied magnetic field, which is well-described by considering changes in the square of the magnetization induced by the magnetic field.


Wang, M., Howells, B., Marshall, R. A., Taylor, J. M., Edmonds, K. W., Rushforth, A. W., …Gallagher, B. L. (2021). Magnetism and magnetoresistance in the critical region of a dilute ferromagnet. Scientific Reports, 11, Article 2300.

Journal Article Type Article
Acceptance Date Dec 28, 2020
Online Publication Date Jan 27, 2021
Publication Date Jan 27, 2021
Deposit Date Feb 10, 2021
Publicly Available Date Feb 11, 2021
Journal Scientific Reports
Print ISSN 2045-2322
Electronic ISSN 2045-2322
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 11
Article Number 2300
Public URL
Publisher URL


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