Magnetism and magnetoresistance in the critical region of a dilute ferromagnet

Wang, M.; Howells, B.; Marshall, R. A.; Taylor, J. M.; Edmonds, K. W.; Rushforth, A. W.; Campion, R. P.; Gallagher, B. L.

Abstract

We present detailed experimental measurements and simulations of the field-dependent magnetization and magnetoresistance in the vicinity of the Curie temperature in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. The observed dependence of the magnetization on external magnetic field and temperature is consistent with three-dimensional Heisenberg equation of state calculations including a narrow distribution of critical temperatures. The magnetoresistance shows a peak at the Curie temperature due to the suppression of magnetic scattering in an applied magnetic field, which is well-described by considering changes in the square of the magnetization induced by the magnetic field.

Citation

Wang, M., Howells, B., Marshall, R. A., Taylor, J. M., Edmonds, K. W., Rushforth, A. W., …Gallagher, B. L. (2021). Magnetism and magnetoresistance in the critical region of a dilute ferromagnet. Scientific Reports, 11, Article 2300. https://doi.org/10.1038/s41598-021-81893-2

• Journal Article Type: Article
• Acceptance Date: Dec 28, 2020
• Online Publication Date: Jan 27, 2021
• Publication Date: Jan 27, 2021
• Deposit Date: Feb 10, 2021
• Publicly Available Date: Feb 11, 2021
• Journal: Scientific Reports
• Print ISSN: 2045-2322
• Electronic ISSN: 2045-2322
• Publisher: Nature Publishing Group
• Peer Reviewed: Peer Reviewed
• Volume: 11
• Article Number: 2300
• DOI: https://doi.org/10.1038/s41598-021-81893-2
• Public URL: https://nottingham-repository.worktribe.com/output/5314570
• Publisher URL: https://www.nature.com/articles/s41598-021-81893-2