Comparative Evaluation of High Power Solid State Power Controller (SSPC) With and Without Auxiliary Over-current Bypass Circuit

Adhikari, Jeevan; Yang, Tao; Bozhko, Serhiy; Wheeler, Patrick

Abstract

This paper explores the possibility of a semiconductor-based over-current bypass circuit for high current solid-state power controllers (SSPCs). Therefore, two different topologies of the bidirectional DC SSPCs: a. without over-current bypass circuit b. with an over-current bypass circuit are presented for the same power ratings. The first SSPC consists of a parallel matrix connection of the discrete MOSFET devices (conducts during nominal and over-current conditions) and the second one is designed with fewer MOSFET loops (conducts during nominal condition) and additional IGBT modules matrices to bypass the over-current. The thermal performances of both the SSPCs are evaluated analytically and compared during the nominal and over-current situations. Later, the PLECS simulation models of the SSPCs are developed and the junction temperature of the devices are estimated. The overall weight, power density, and cost of these two SSPCs are approximated for the comparison. It is found that the SSPC topology with bypass circuit exhibits better power density and lower cost. Therefore, it can be employed to replace the tradition circuit breakers for the more electric aircraft (MEA) in the near future.

Citation

Adhikari, J., Yang, T., Bozhko, S., & Wheeler, P. (2019, October). Comparative Evaluation of High Power Solid State Power Controller (SSPC) With and Without Auxiliary Over-current Bypass Circuit. Presented at IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal

• Presentation Conference Type: Edited Proceedings
• Conference Name: IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
• Start Date: Oct 14, 2019
• End Date: Oct 17, 2019
• Acceptance Date: Jul 4, 2020
• Online Publication Date: Dec 9, 2019
• Publication Date: 2019-10
• Deposit Date: Jan 27, 2021
• Publicly Available Date: Jan 27, 2021
• Pages: 2628-2633
• Series ISSN: 2577-1647
• Book Title: Proceedings: IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
• ISBN: 978-1-7281-4879-3
• DOI: https://doi.org/10.1109/IECON.2019.8926717
• Keywords: MOSFET, Junctions, Insulated gate bipolar transistors, Circuit breakers, Aircraft, Thermal resistance
• Public URL: https://nottingham-repository.worktribe.com/output/5271824
• Publisher URL: https://ieeexplore.ieee.org/document/8926717
• Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.