The destruction mechanism in GCTs

Lophitis, Neophytos; Antoniou, Marina; Udrea, Florin; Bauer, Friedhelm D.; Nistor, Iulian; Arnold, M.; Wikstrom, Tobias; Vobecky, Jan

Abstract

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. 

Citation

Lophitis, N., Antoniou, M., Udrea, F., Bauer, F. D., Nistor, I., Arnold, M., …Vobecky, J. (2013). The destruction mechanism in GCTs. IEEE Transactions on Electron Devices, 60(2), 819-826. https://doi.org/10.1109/TED.2012.2235442

• Journal Article Type: Article
• Online Publication Date: Jan 14, 2013
• Publication Date: 2013-02
• Deposit Date: May 5, 2020
• Journal: IEEE Transactions on Electron Devices
• Print ISSN: 0018-9383
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 60
• Issue: 2
• Pages: 819-826
• DOI: https://doi.org/10.1109/TED.2012.2235442
• Keywords: Full wafer modeling, gate-commutated thyristor (GCT), maximum controllable current (MCC), safe operating area, thyristor
• Public URL: https://nottingham-repository.worktribe.com/output/4238073
• Publisher URL: https://ieeexplore.ieee.org/document/6410404