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Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors

Lv, Quanshan; Yan, Faguang; Mori, Nobuya; Zhu, Wenkai; Kudrynskyi, Zakhar R; Hu, Ce; Kovalyuk, Zakhar D; Patanè, Amalia; Wang, Kaiyou


Quanshan Lv

Faguang Yan

Nobuya Mori

Wenkai Zhu

Zakhar R Kudrynskyi

Ce Hu

Zakhar D Kovalyuk

Amalia Patanè

Kaiyou Wang


© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ≈ 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.

Journal Article Type Article
Publication Date Apr 14, 2020
Journal Advanced Functional Materials
Print ISSN 1616-301X
Electronic ISSN 1616-3028
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 30
Issue 15
Article Number 1910713
APA6 Citation Lv, Q., Yan, F., Mori, N., Zhu, W., Hu, C., Kudrynskyi, Z. R., …Wang, K. (2020). Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors. Advanced Functional Materials, 30(15),
Keywords Electrochemistry; Electronic, Optical and Magnetic Materials; General Chemical Engineering; Condensed Matter Physics; Biomaterials
Publisher URL
Additional Information Received: 2019-12-26; Published: 2020-02-16