Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors
Lv, Quanshan; Yan, Faguang; Mori, Nobuya; Zhu, Wenkai; Kudrynskyi, Zakhar R; Hu, Ce; Kovalyuk, Zakhar D; Patanè, Amalia; Wang, Kaiyou
Zakhar R Kudrynskyi
Zakhar D Kovalyuk
Amalia Patanè email@example.com
Kaiyou Wang firstname.lastname@example.org.
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ≈ 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.
|Journal Article Type||Article|
|Publication Date||Apr 14, 2020|
|Journal||Advanced Functional Materials|
|Peer Reviewed||Peer Reviewed|
|APA6 Citation||Lv, Q., Yan, F., Mori, N., Zhu, W., Hu, C., Kudrynskyi, Z. R., …Wang, K. (2020). Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors. Advanced Functional Materials, 30(15), https://doi.org/10.1002/adfm.201910713|
|Keywords||Electrochemistry; Electronic, Optical and Magnetic Materials; General Chemical Engineering; Condensed Matter Physics; Biomaterials|
|Additional Information||Received: 2019-12-26; Published: 2020-02-16|
This file is under embargo until Feb 17, 2021 due to copyright restrictions.
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