Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors

Lv, Quanshan; Yan, Faguang; Mori, Nobuya; Zhu, Wenkai; Hu, Ce; Kudrynskyi, Zakhar R; Kovalyuk, Zakhar D; Patan�, Amalia; Wang, Kaiyou

Abstract

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 108 and negative differential resistance at low applied voltages (V ≈ 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.

Citation

Lv, Q., Yan, F., Mori, N., Zhu, W., Hu, C., Kudrynskyi, Z. R., …Wang, K. (2020). Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors. Advanced Functional Materials, 30(15), Article 1910713. https://doi.org/10.1002/adfm.201910713

• Journal Article Type: Article
• Acceptance Date: Jan 22, 2020
• Online Publication Date: Feb 16, 2020
• Publication Date: Apr 14, 2020
• Deposit Date: Jan 23, 2020
• Publicly Available Date: Feb 17, 2021
• Journal: Advanced Functional Materials
• Print ISSN: 1616-301X
• Electronic ISSN: 1616-3028
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 30
• Issue: 15
• Article Number: 1910713
• DOI: https://doi.org/10.1002/adfm.201910713
• Keywords: Electrochemistry; Electronic, Optical and Magnetic Materials; General Chemical Engineering; Condensed Matter Physics; Biomaterials
• Public URL: https://nottingham-repository.worktribe.com/output/3786270
• Publisher URL: https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201910713
• Additional Information: Received: 2019-12-26; Published: 2020-02-16