M. Antoniou
Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area
Antoniou, M.; Lophitis, N.; Udrea, F.; Rahimo, M.; Vemulapati, U.; Corvasce, C.; Badstuebner, U.
Authors
N. Lophitis
F. Udrea
M. Rahimo
U. Vemulapati
C. Corvasce
U. Badstuebner
Abstract
© 1980-2012 IEEE. A new type of high-voltage termination, namely the 'deep p-ring trench' termination design for high-voltage, high-power devices, is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required but also removes the need for an additional mask as is the case of the traditional p+ ring-type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide, which results in reduced hot carrier injection and improved device reliability.
Citation
Antoniou, M., Lophitis, N., Udrea, F., Rahimo, M., Vemulapati, U., Corvasce, C., & Badstuebner, U. (2019). Deep p-Ring Trench Termination: An Innovative and Cost-Effective Way to Reduce Silicon Area. IEEE Electron Device Letters, 40(2), 177-180. https://doi.org/10.1109/LED.2018.2890702
Journal Article Type | Article |
---|---|
Acceptance Date | Dec 24, 2018 |
Online Publication Date | Jan 3, 2019 |
Publication Date | Feb 1, 2019 |
Deposit Date | Apr 24, 2020 |
Publicly Available Date | Apr 24, 2020 |
Journal | IEEE Electron Device Letters |
Print ISSN | 0741-3106 |
Electronic ISSN | 1558-0563 |
Publisher | Institute of Electrical and Electronics Engineers |
Peer Reviewed | Peer Reviewed |
Volume | 40 |
Issue | 2 |
Pages | 177-180 |
DOI | https://doi.org/10.1109/LED.2018.2890702 |
Keywords | Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials |
Public URL | https://nottingham-repository.worktribe.com/output/3706507 |
Publisher URL | https://ieeexplore.ieee.org/document/8600343 |
Additional Information | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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