Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing

Shiffa, Mustaqeem; Dewes, Benjamin T.; Bradford, Jonathan; Cottam, Nathan D.; Cheng, Tin S.; Mellor, Christopher J.; Makarovskiy, Oleg; Rahman, Kazi; O'Shea, James N.; Beton, Peter H.; Novikov, Sergei V.; Ben, Teresa; Gonzalez, David; Xie, Jiahao; Zhang, Lijun; Patanè, Amalia

Abstract

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom‐up technique based on epitaxy is used to demonstrate high‐quality, wafer‐scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well‐defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV‐C spectral range, offering a scalable route to deep‐UV optoelectronics.

Citation

Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., Makarovskiy, O., Rahman, K., O'Shea, J. N., Beton, P. H., Novikov, S. V., Ben, T., Gonzalez, D., Xie, J., Zhang, L., & Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

• Journal Article Type: Article
• Acceptance Date: Sep 6, 2023
• Online Publication Date: Oct 5, 2023
• Publication Date: Feb 15, 2024
• Deposit Date: Sep 8, 2023
• Publicly Available Date: Oct 6, 2024
• Journal: Small
• Print ISSN: 1613-6810
• Electronic ISSN: 1613-6829
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 20
• Issue: 7
• Article Number: 2305865
• DOI: https://doi.org/10.1002/smll.202305865
• Keywords: molecular beam epitaxy; gallium selenide; photodetector; optoelectronics
• Public URL: https://nottingham-repository.worktribe.com/output/25073247
• Publisher URL: https://onlinelibrary.wiley.com/doi/10.1002/smll.202305865
• Additional Information: Received: 2023-07-12; Published: 2023-10-05