Skip to main content

Research Repository

Advanced Search

Direct band-gap crossover in epitaxial monolayer boron nitride

Elias, C.; Valvin, P.; Pelini, T.; Summerfield, A.; Mellor, C.J.; Cheng, T.S.; Eaves, L.; Foxon, C.T.; Beton, P.H.; Novikov, S.V.; Gil, B.; Cassabois, G.


C. Elias

P. Valvin

T. Pelini

A. Summerfield

C.J. Mellor

T.S. Cheng

L. Eaves

C.T. Foxon

P.H. Beton

S.V. Novikov

B. Gil

G. Cassabois


Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of monolayer boron nitride remain largely unexplored. In particular, the theoretically expected crossover to a direct-gap in the limit of the single monolayer is presently not con_rmed experimentally. Here, in contrast to the technique of exfoliating few-layer 2D hexagonal boron nitride, we exploit the scalable approach of high-temperature molecular beam epitaxy to grow high-quality monolayer boron nitride on graphite substrates. We combine deep-ultraviolet photoluminescence and reectance spectroscopy with atomic force microscopy to reveal the presence of a direct gap of energy 6.1 eV in the single atomic layers, thus con_rming a crossover to direct gap in the monolayer limit.

Journal Article Type Article
Publication Date Jun 14, 2019
Electronic ISSN 2041-1723
Publisher Nature Publishing Group
Peer Reviewed Peer Reviewed
Volume 10
Article Number 2639
APA6 Citation Elias, C., Valvin, P., Pelini, T., Summerfield, A., Mellor, C., Cheng, T., …Cassabois, G. (2019). Direct band-gap crossover in epitaxial monolayer boron nitride. Nature Communications, 10,
Publisher URL


You might also like

Downloadable Citations