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GaN transistors efficient cooling by graphene foam

Antonini, Mattia; Cova, Paolo; Delmonte, Nicola; Castellazzi, Alberto

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Mattia Antonini

Paolo Cova

Nicola Delmonte

Alberto Castellazzi


© 2018 Elsevier Ltd Graphene conductive foams have shown very high potential as cooling material in electronic systems. Its exploitation with discrete GaN transistors is demonstrated in this paper. A proper experimental setup is developed to extract the high temperature thermal performance of this material at different test conditions. The results are very promising, showing a noticeable reduction of the device maximum temperature, especially at high dissipated power densities. Moreover, experimental results allowed the validation of a 3D finite element model of the assembled device, which can be used for thermal layout optimization. Finally, preliminary stress tests are in progress, to evaluate the stability of electrical and thermal performance of the proposed graphene based assembly. Good stability was obtained, both at low and high ambient temperatures.

Journal Article Type Article
Acceptance Date Jul 1, 2018
Online Publication Date Sep 30, 2018
Publication Date Sep 1, 2018
Deposit Date Nov 14, 2018
Publicly Available Date Sep 2, 2019
Journal Microelectronics Reliability
Print ISSN 0026-2714
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 88-90
Pages 812-816
Keywords Electrical and Electronic Engineering; Atomic and Molecular Physics, and Optics; Electronic, Optical and Magnetic Materials; Surfaces, Coatings and Films; Safety, Risk, Reliability and Quality; Condensed Matter Physics
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Additional Information This article is maintained by: Elsevier; Article Title: GaN transistors efficient cooling by graphene foam; Journal Title: Microelectronics Reliability; CrossRef DOI link to publisher maintained version:; Content Type: article; Copyright: © 2018 Elsevier Ltd. All rights reserved.


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