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Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN

Fay, Mike W.; Harrison, Ian; Birbeck, J.C.; Hughes, B.T.; Uren, M.J.; Martin, T.; Brown, Paul D.

Authors

Mike W. Fay

Ian Harrison

J.C. Birbeck

B.T. Hughes

M.J. Uren

T. Martin

Paul D. Brown



Contributors

M. Aindow
Editor

C.J. Kiely
Editor

Abstract

Ti/Al/Ti/Au and Ti/Al/Pd/Au contacts to AlGaN/GaN have been investigated to ascertain the effect of annealing temperature on the structural evolution of the contacts. Ti/Al/Ti/Au contacts become ohmic after rapid thermal annealing at 750°C or higher, corresponding to the formation of an interfacial TiN phase, with inclusions penetrating through the AlGaN layer observed after annealing at 950°C. The Pd layer is shown to be more efficient at inhibiting diffusion of Au to the interface than Ti. Ohmic behaviour was not seen with the Ti/Al/Pd/Au scheme. Either the presence of Au at the interface may improve ohmic behaviour, or the Ti:Al ratio is insufficient in this scheme.

Citation

Fay, M. W., Harrison, I., Birbeck, J., Hughes, B., Uren, M., Martin, T., & Brown, P. D. Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN. In M. Aindow, & C. Kiely (Eds.), Electron microscopy and analysis 2001: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Dundee, 5-7 SeptemberIOP Publishing Ltd

Deposit Date May 19, 2011
Peer Reviewed Peer Reviewed
Issue 168
Series Title Institute of Physics conference series
Book Title Electron microscopy and analysis 2001: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Dundee, 5-7 September
ISBN 9780750308120
Keywords TEM, TiAlTiAu, TiAlPdAu, AlGaN/GaN, ohmic contact
Public URL http://eprints.nottingham.ac.uk/id/eprint/1468
Related Public URLs http://iopscience.iop.org/

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