Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates
(2018)
Journal Article
Gunes, M., Ukelge, M., Donmez, O., Erol, A., Gumus, C., Alghamdi, H., Galeti, H., Henini, M., Schmidbauer, M., Hilska, J., Puustinen, J., & Guina, M. (2018). Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates. Semiconductor Science and Technology, 33(12), Article 124015. https://doi.org/10.1088/1361-6641/aaea2e
In this work, the electronic bandstructure of GaAs1−xBix/GaAs single quantum well (QW) samples grown by molecular beam epitaxy is investigated by photomodulated reflectance (PR) measurements as a function of Bi content (0.0065 ≤ x ≤ 0.0215) and subst... Read More about Optical Properties of GaAs1−xBix/GaAs Quantum Well Structures Grown by Molecular Beam Epitaxy on (100) and (311)B GaAs Substrates.