Outputs (103)

Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects (2022)
Journal Article
Dalapati, P., Almalki, A., Alhassan, S., Alotaibi, S., Huwayz, M. A., Nakabayashi, T., Egawa, T., Miyoshi, M., & Henini, M. (2022). Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects. Sensors and Actuators A: Physical, 347, Article 113935. https://doi.org/10.1016/j.sna.2022.113935

To examine the critical role of electrically active defects and surface states in InGaN/GaN multiple quantum well (MQW) ultraviolet photodetectors (UV-PDs), the study of degradation mechanisms in such devices is very important. In this work, we have... Read More about Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects.

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy (2022)
Journal Article
Al Huwayz, M., Galeti, H., Lemine, O. M., Ibnaouf, K. H., Alkaoud, A., Alaskar, Y., Salhi, A., Alhassan, S., Alotaibi, S., Almalki, A., Almunyif, A., Alhassni, A., Jameel, D. A., Gobato, Y. G., & Henini, M. (2022). Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy. Journal of Luminescence, 251, Article 119155. https://doi.org/10.1016/j.jlumin.2022.119155

Extensive work on InAs quantum dots grown on GaAs substrates has been reported in the literature. However, research in the use of different substrate materials such as silicon to achieve an ideal and full integration of photonic and electronic system... Read More about Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy.

A novel approach for engineering efficient nanofluids by radiolysis (2022)
Journal Article
Maaza, M., Khamliche, T., Akbari, M., Kana, N., Tandjigora, N., Beukes, P., Genu, A., Kaviyarasu, K., Cloete, J. K., Lekala, M., Gibaud, A., & Henini, M. (2022). A novel approach for engineering efficient nanofluids by radiolysis. Scientific Reports, 12, Article 10767. https://doi.org/10.1038/s41598-022-14540-z

This contribution reports for the first time the possibility of using radiolysis to engineer stable efficient nanofluids which exhibit an enhanced thermal conductivity. The validation was confirmed on Ag-H2O and Ag-C2H6O2 nanofluids fabricated via g-... Read More about A novel approach for engineering efficient nanofluids by radiolysis.

Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications (2022)
Journal Article
Lemine, O. M., Al Huwayz, M., Ibnaouf, K. H., Alkaoud, A., Salhi, A., & Henini, M. (2022). Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications. Journal of Nanoelectronics and Optoelectronics, 17(5), 837-842. https://doi.org/10.1166/jno.2022.3258

This work aims to investigate the structural, electrical, and optical properties of InAs quantum dots (QDs) grown by Molecular Beam Epitaxy on GaAs substrates. As-made samples were thoroughly characterized using different techniques, including Atomic... Read More about Structural, Optical and Electrical Properties of Self-Assembled InAs Quantum Dots Based p–i–n Devices Grown on GaAs Substrate by Molecular Beam Epitaxy for Telecommunication Applications.

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes (2022)
Journal Article
Lakhdari, I., Sengouga, N., Labed, M., Tibermacine, T., Mari, R., & Henini, M. (2022). Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes. Semiconductor Science and Technology, 37(5), Article 055022. https://doi.org/10.1088/1361-6641/ac612a

Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. T... Read More about Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes.

Mercury goes Solid at room temperature at nanoscale and a potential Hg waste storage (2022)
Journal Article
Kana, N., Morad, R., Akbari, M., Henini, M., Niemela, J., Hacque, F., Gibaud, A., & Maaza, M. (2022). Mercury goes Solid at room temperature at nanoscale and a potential Hg waste storage. Scientific Reports, 12(1), Article 3494. https://doi.org/10.1038/s41598-022-06857-6

While room temperature bulk mercury is liquid, it is solid in its nano-configuration (Ønano-Hg ≤ 2.5 nm). Conjugating the nano-scale size effect and the Laplace driven surface excess pressure, Hg nanoparticles of Ønano-Hg ≤ 2.4 nm embedded in a 2-D t... Read More about Mercury goes Solid at room temperature at nanoscale and a potential Hg waste storage.

From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics (2022)
Journal Article
Sintwa, N., Ditlopo, N., Khamlich, S., Manikandan, E., Gnanasekaran, K., Henini, M., Gibaud, A., Krief, A., & Maaza, M. (2022). From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics. Scientific Reports, 12(1), Article 3468. https://doi.org/10.1038/s41598-022-06828-x

Single phase CeO2 nanocrystals were bio-synthesized using Hoodia gordonii natural extract as an effective chelating agent. The nanocrystals with an average diameter of 〈Ø〉 ~ 5–26 nm with 4+ electronic valence of Ce displayed a remarkable UV selecti... Read More about From Khoi-San indigenous knowledge to bioengineered CeO2 nanocrystals to exceptional UV-blocking green nanocosmetics.

Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy (2022)
Journal Article
Oussalah, S., Filali, W., Garoudja, E., Zatout, B., Lekoui, F., Amrani, R., Sengouga, N., & Henini, M. (2022). Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectronics Journal, 122, Article 105409. https://doi.org/10.1016/j.mejo.2022.105409

The temperature effect on the electrical characteristics of Au/Ti on Beryllium-doped Al0.29Ga0.71As Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy has been investigated for various temperatures ranging from 260 to 400 K. By... Read More about Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy.

On the trapping of neutrons in Fabry–Pérot nano-structures and potential applications for cold neutron lifetime Investigations (2022)
Journal Article
Maaza, M., Pardo, B., Hamidi, D., Akbari, M., Morad, R., Henini, M., & Gibaud, A. (2023). On the trapping of neutrons in Fabry–Pérot nano-structures and potential applications for cold neutron lifetime Investigations. Journal of Neutron Research, 25(1), 13-28. https://doi.org/10.3233/jnr-220015

Correlated to the neutron total reflection phenomenon is the so-called frustrated total reflection, also known as neutron channeling, observed with both thermal and cold neutrons. Within this contribution, such a phenomenon is validated in various ad... Read More about On the trapping of neutrons in Fabry–Pérot nano-structures and potential applications for cold neutron lifetime Investigations.

Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates (2022)
Journal Article
Alghamdi, H., Alhassni, A., Alhassan, S., Almunyif, A., Klekovkin, A. V., Trunkin, I. N., Vasiliev, A. L., Galeti, H. V., Galvão Gobato, Y. G., Kazakov, I. P., & Henini, M. (2022). Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates. Journal of Alloys and Compounds, 905, Article 164015. https://doi.org/10.1016/j.jallcom.2022.164015

In this work, we have investigated the effect of Bi surfactant on structural, morphological and optical properties of 5 monolayers self-assembled InGaAs quantum dots (QDs) grown on GaAs (001) substrates at various growth temperatures (435, 467 and 49... Read More about Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates.