Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE
(2024)
Journal Article
Gunes, M., Aydın, M., Donmez, O., Gumus, C., Erol, A., Marroquin, J. F., Felix, J. F., Yoshikawa, A., Geka, H., Kuze, N., & Henini, M. (2024). Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE. Materials Science and Engineering: B, 305, Article 117424. https://doi.org/10.1016/j.mseb.2024.117424
Temperature-dependent carrier transport properties of two InSb epilayers grown on GaAs substrates by Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) are investigated. The InSb epilayer grown by MBE was undoped, but th... Read More about Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE.