UIS failure mechanism of SiC power MOSFETs
(2016)
Presentation / Conference Contribution
Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. UIS failure mechanism of SiC power MOSFETs. Presented at 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2016)
This paper investigates the failure mechanism of SiC power MOSFETs during avalanche breakdown under unclamped inductive switching (UIS) test regime. Switches deployed within motor drive applications could experience undesired avalanche breakdown even... Read More about UIS failure mechanism of SiC power MOSFETs.