All Outputs (2)

Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing (2024)
Journal Article
Bradford, J., Dewes, B. T., Shiffa, M., Cottam, N. D., Rahman, K., Cheng, T. S., Novikov, S. V., Makarovsky, O., O'Shea, J. N., Beton, P. H., Lara-Avila, S., Harknett, J., Greenaway, M. T., & Patanè, A. (2024). Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing. Small, 20(40), Article 2404809. https://doi.org/10.1002/smll.202404809

2D semiconductors can drive advances in quantum science and technologies. However, they should be free of any contamination; also, the crystallographic ordering and coupling of adjacent layers and their electronic properties should be well‐controlled... Read More about Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing.

Spatially-resolved UV-C emission in epitaxial monolayer boron nitride (2024)
Journal Article
Rousseau, A., Plo, J., Plo, J., Valvin, P., Cheng, T. S., Bradford, J., James, T. S. S., Wrigley, J., Mellor, C. J., Beton, P. H., Novikov, S. V., Jacques, V., Gil, B., & Cassabois, G. (2024). Spatially-resolved UV-C emission in epitaxial monolayer boron nitride. 2D Materials, 11(2), Article 025026. https://doi.org/10.1088/2053-1583/ad2f45

We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescenc... Read More about Spatially-resolved UV-C emission in epitaxial monolayer boron nitride.