Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux

Han, Y.; Fay, Mike W.; Brown, Paul D.; Novikov, Sergei V.; Edmonds, K.W.; Gallagher, B.L.; Campion, R.P.; Foxon, C.T.

Abstract

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.

Citation

Han, Y., Fay, M. W., Brown, P. D., Novikov, S. V., Edmonds, K., Gallagher, B., Campion, R., & Foxon, C. (2005). Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux. In A. Cullis, & J. Hutchison (Eds.), Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer-Verlag

• Publication Date: Jan 1, 2005
• Deposit Date: Aug 12, 2011
• Publicly Available Date: Aug 12, 2011
• Peer Reviewed: Peer Reviewed
• Issue: 107
• Series Title: Springer proceedings in physics
• Book Title: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK
• ISBN: 9783540319146
• Keywords: TEM, spintronics, GaMnN, MBE
• Public URL: https://nottingham-repository.worktribe.com/output/1020378
• Publisher URL: http://www.springer.com/materials/book/978-3-540-31914-6
• Additional Information: The original publication is available at www.springerlink.com