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Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy

Bradford, Jonathan; Cheng, Tin S.; James, Tyler S.S.; Khlobystov, Andrei N.; Mellor, Christopher J.; Watanabe, Kenji; Taniguchi, Takashi; Novikov, Sergei V.; Beton, Peter H.

Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy Thumbnail


Authors

TIN CHENG Tin.Cheng@nottingham.ac.uk
Research Fellow

Tyler S.S. James

Kenji Watanabe

Takashi Taniguchi

PETER BETON peter.beton@nottingham.ac.uk
Professor of Physics



Abstract

Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the interface. In this work we demonstrate lateral heteroepitaxial growth of graphene nanoribbons (GNRs) passivated by hBN using high-temperature molecular beam epitaxy (HT-MBE) to grow graphene in oriented hBN trenches formed ex-situ by catalytic nanoparticle etching. High-resolution atomic force microscopy (AFM) reveals that GNRs grow epitaxially from the etched hBN edges, and merge to form a GNR network passivated by hBN. Using conductive AFM we probe the nanoscale electrical properties of the nanoribbons and observe quasiparticle interference patterns caused by intervalley scattering at the graphene/hBN interface, which carries implications for the potential transport characteristics of hBN passivated GNR devices.

Citation

Bradford, J., Cheng, T. S., James, T. S., Khlobystov, A. N., Mellor, C. J., Watanabe, K., …Beton, P. H. (2023). Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy. 2D Materials, 10(3), Article 035035. https://doi.org/10.1088/2053-1583/acdefc

Journal Article Type Article
Acceptance Date Jun 16, 2023
Online Publication Date Jun 29, 2023
Publication Date Jul 1, 2023
Deposit Date Jun 29, 2023
Publicly Available Date Jun 30, 2023
Journal 2D Materials
Electronic ISSN 2053-1583
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 10
Issue 3
Article Number 035035
DOI https://doi.org/10.1088/2053-1583/acdefc
Keywords graphene nanoribbons, hexagonal boron nitride, lateral heterostructure, conductive AFM, molecular beam epitaxy, nanoparticle etching
Public URL https://nottingham-repository.worktribe.com/output/22186579
Publisher URL https://iopscience.iop.org/article/10.1088/2053-1583/acdefc

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