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Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing

Shiffa, Mustaqeem; Dewes, Benjamin T.; Bradford, Jonathan; Cottam, Nathan D.; Cheng, Tin S.; Mellor, Christopher J.; Makarovskiy, Oleg; Rahman, Kazi; O'Shea, James N.; Beton, Peter H.; Novikov, Sergei V.; Ben, Teresa; Gonzalez, David; Xie, Jiahao; Zhang, Lijun; Patanè, Amalia

Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing Thumbnail


Authors

Mustaqeem Shiffa

Benjamin T. Dewes

TIN CHENG Tin.Cheng@nottingham.ac.uk
Research Fellow

Kazi Rahman

Profile image of JAMES O'SHEA

JAMES O'SHEA J.OSHEA@NOTTINGHAM.AC.UK
Associate Professor and Reader in Physics

PETER BETON peter.beton@nottingham.ac.uk
Professor of Physics

Teresa Ben

David Gonzalez

Jiahao Xie

Lijun Zhang



Abstract

2D semiconductors (2SEM) can transform many sectors, from information and communication technology to healthcare. To date, top‐down approaches to their fabrication, such as exfoliation of bulk crystals by “scotch‐tape,” are widely used, but have limited prospects for precise engineering of functionalities and scalability. Here, a bottom‐up technique based on epitaxy is used to demonstrate high‐quality, wafer‐scale 2SEM based on the wide band gap gallium selenide (GaSe) compound. GaSe layers of well‐defined thickness are developed using a bespoke facility for the epitaxial growth and in situ studies of 2SEM. The dominant centrosymmetry and stacking of the individual van der Waals layers are verified by theory and experiment; their optical anisotropy and resonant absorption in the UV spectrum are exploited for photon sensing in the technological UV‐C spectral range, offering a scalable route to deep‐UV optoelectronics.

Citation

Shiffa, M., Dewes, B. T., Bradford, J., Cottam, N. D., Cheng, T. S., Mellor, C. J., …Patanè, A. (2024). Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing. Small, 20(7), Article 2305865. https://doi.org/10.1002/smll.202305865

Journal Article Type Article
Acceptance Date Sep 6, 2023
Online Publication Date Oct 5, 2023
Publication Date Feb 15, 2024
Deposit Date Sep 8, 2023
Publicly Available Date Oct 6, 2024
Journal Small
Print ISSN 1613-6810
Electronic ISSN 1613-6829
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 20
Issue 7
Article Number 2305865
DOI https://doi.org/10.1002/smll.202305865
Keywords molecular beam epitaxy; gallium selenide; photodetector; optoelectronics
Public URL https://nottingham-repository.worktribe.com/output/25073247
Publisher URL https://onlinelibrary.wiley.com/doi/10.1002/smll.202305865
Additional Information Received: 2023-07-12; Published: 2023-10-05

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