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Dr RISHAD AHMED's Outputs (23)

Soft-switching operation of the dual-interleaved boost converter over all duty ratios (2017)
Journal Article
Ahmed, M. R., Todd, R., & Forsyth, A. J. (2017). Soft-switching operation of the dual-interleaved boost converter over all duty ratios. IET Power Electronics, 10(11), 1250-1258. https://doi.org/10.1049/iet-pel.2016.0861

To extend the operating range of the snubber assisted zero-voltage and zero-current transition dual-interleaved boost converter beyond its inherent soft-switching limit of D = 0.5, a resonant pulse transformer is proposed instead of the resonant indu... Read More about Soft-switching operation of the dual-interleaved boost converter over all duty ratios.

Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions (2017)
Journal Article
Ahmed, M. R., Todd, R., & Forsyth, A. J. (2017). Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions. IEEE Transactions on Industrial Electronics, 64(11), 9001-9011. https://doi.org/10.1109/tie.2017.2721882

Circuit-level analytical models for hard-switching, soft-switching, and dv/dt-induced false turn on of SiC MOSFETs and their experimental validation are described. The models include the high-frequency parasitic components in the circuit and enable f... Read More about Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions.

Analysis of SiC MOSFETs under hard and soft-switching (2015)
Presentation / Conference Contribution
Ahmed, M. R., Todd, R., & Forsyth, A. J. (2015, September). Analysis of SiC MOSFETs under hard and soft-switching. Presented at 2015 IEEE Energy Conversion Congress and Exposition, Montreal, QC, Canada

Analytical models for hard-switching and soft-switching SiC MOSFETs and their experimental validation are described in this paper. The models include the high frequency parasitic components in the circuit and enable very fast, accurate simulation of... Read More about Analysis of SiC MOSFETs under hard and soft-switching.