High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum
(2022)
Journal Article
Zebardastan, N., Bradford, J., Lipton-Duffin, J., MacLeod, J., Ostrikov, K. (., Tomellini, M., & Motta, N. (2023). High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum. Nanotechnology, 34(10), Article 105601. https://doi.org/10.1088/1361-6528/aca8b2
Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed for silicon... Read More about High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum.