Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions
(2022)
Journal Article
Zhu, W., Xie, S., Lin, H., Zhang, G., Wu, H., Hu, T., Wang, Z., Zhang, X., Xu, J., Wang, Y., Zheng, Y., Yan, F., Zhang, J., Zhao, L., Patanè, A., Zhang, J., Chang, H., & Wang, K. (2022). Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions. Chinese Physics Letters, 39(12), Article 128501. https://doi.org/10.1088/0256-307x/39/12/128501
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as the magnetic random-access memory, magnetic sensors and programmable logic devices. In particular, MTJs based on two-dimensional van der Waals (vdW) heterostructur... Read More about Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions.