Switching Behaviour of GaN-based Power Converter subject to Current-Collapse Effect in Double-Pulse Test
(2019)
Presentation / Conference Contribution
Videt, A., Li, K., Pace, L., Idir, N., Evans, P., & Johnson, M. (2019, July). Switching Behaviour of GaN-based Power Converter subject to Current-Collapse Effect in Double-Pulse Test. Poster presented at Centre for Power Electronics Annual Conference 2019, Loughborough, UK
Professor MARK JOHNSON's Outputs (2)
10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field (2019)
Journal Article
DiMarino, C. M., Mouawad, B., Johnson, C. M., Boroyevich, D., & Burgos, R. (2020). 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field. IEEE Transactions on Power Electronics, 35(6), 6050-6060. https://doi.org/10.1109/tpel.2019.2952633The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10 kV is expected to revolutionize medium- and high-voltage systems. However, present power module packages are limiting the performance of these unique switches. T... Read More about 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field.