All Outputs (2)

Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)
Journal Article
Román, R. J. P., Costa, F. J. R., Zobelli, A., Elias, C., Valvin, P., Cassabois, G., …Zagonel, L. F. (2021). Band gap measurements of monolayer h-BN and insights into carbon-related point defects. 2D Materials, 8(4), Article 044001. https://doi.org/10.1088/2053-1583/ac0d9c

Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature si... Read More about Band gap measurements of monolayer h-BN and insights into carbon-related point defects.

Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures (2021)
Journal Article
Wrigley, J., Bradford, J., James, T., Cheng, T. S., Thomas, J., Mellor, C. J., …Beton, P. H. (2021). Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures. 2D Materials, 8(3), 1-10. https://doi.org/10.1088/2053-1583/abea66

Monolayers of hexagonal boron nitride (hBN) are grown on graphite substrates using high-temperature molecular beam epitaxy (HT-MBE). The hBN monolayers are observed to grow predominantly from step edges on the graphite surface and exhibit a strong de... Read More about Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures.