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Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism (2016)
Journal Article
Zhou, S., Li, L., Yuan, Y., Rushforth, A., Chen, L., Wang, Y., …Helm, M. (2016). Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism. Physical Review B, 94(7), https://doi.org/10.1103/PhysRevB.94.075205

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity... Read More about Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism.

The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper) (2016)
Presentation / Conference Contribution
Bongs, K., Boyer, V., Cruise, M., Freise, A., Holynski, M., Hughes, J., Kaushik, A., Lien, Y.-H., Niggebaum, A., Perea-Ortiz, M., Petrov, P., Plant, S., Singh, Y., Stabrawa, A., Paul, D., Sorel, M., Cumming, D., Marsh, J., Bowtell, R. W., Bason, M., …John, P. (2016, April). The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper). Presented at SPIE Photonics Europe, 2016, Brussels, Belgium

The UK National Quantum Technology Hub in Sensors and Metrology is one of four flagship initiatives in the UK National of Quantum Technology Program. As part of a 20-year vision it translates laboratory demonstrations to deployable practical devices,... Read More about The UK National Quantum Technologies Hub in sensors and metrology (Keynote Paper).

Intrinsic magnetic refrigeration of a single electron transistor (2016)
Journal Article
Ciccarelli, C., Campion, R., Gallagher, B., & Ferguson, A. (2016). Intrinsic magnetic refrigeration of a single electron transistor. Applied Physics Letters, 108(5), Article 053103. https://doi.org/10.1063/1.4941289

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by usi... Read More about Intrinsic magnetic refrigeration of a single electron transistor.

Electrical switching of an antiferromagnet (2016)
Journal Article
Wadley, P., Howells, B., Železný, J., Andrews, C., Hills, V., Campion, R. P., …Jungwirth, T. (2016). Electrical switching of an antiferromagnet. Science, 351(6273), 587-590. https://doi.org/10.1126/science.aab1031

Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating cur... Read More about Electrical switching of an antiferromagnet.