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Intrinsic magnetic refrigeration of a single electron transistor

Ciccarelli, C.; Campion, R.P.; Gallagher, B.L.; Ferguson, A.J.

Authors

C. Ciccarelli

R.P. Campion

B.L. Gallagher

A.J. Ferguson



Abstract

In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

Citation

Ciccarelli, C., Campion, R., Gallagher, B., & Ferguson, A. (2016). Intrinsic magnetic refrigeration of a single electron transistor. Applied Physics Letters, 108(5), Article 053103. https://doi.org/10.1063/1.4941289

Journal Article Type Article
Acceptance Date Jan 21, 2016
Publication Date Feb 3, 2016
Deposit Date Aug 8, 2016
Publicly Available Date Mar 29, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 108
Issue 5
Article Number 053103
DOI https://doi.org/10.1063/1.4941289
Public URL https://nottingham-repository.worktribe.com/output/777207
Publisher URL http://scitation.aip.org/content/aip/journal/apl/108/5/10.1063/1.4941289

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